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3 300 V IGBT Based on Enhanced Trench Metal Oxide Semiconductor Technology with High Performance
Published 2017-01-01“…It developed a new enhanced trench metal oxide semiconductor (TMOS+) 3 300 V IGBT with soft punch through (SPT) concept and n-well layer. …”
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A Study on the Timing Sensitivity of the Transient Dose Rate Effect on Complementary Metal-Oxide-Semiconductor Image Sensor Readout Circuits
Published 2024-11-01“…Complementary Metal-Oxide-Semiconductor (CMOS) image sensors (CISs), known for their high integration, low cost, and superior performance, have found widespread applications in satellite and space exploration. …”
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A Compact Model for BEOL-Compatible Ferroelectric Thin Film Transistors With Metal/Ferroelectric/Semiconductor Structure
Published 2025-01-01“…Our modeling methodology is based on the nucleation-limited-switching (NLS) model to capture the dynamics of multi-domain ferroelectric (FE) switching, as well as the multiple-trapping-releasing (MTR) mobility model to capture the trap-limited conduction (TLC) mechanism in amorphous oxide semiconductor channel. Conservation of FE polarization charge and network charge in the semiconductor channel are calculated self-consistently in the HSPICE circuit simulator for metal/ferroelectric/semiconductor (MFS) gate stack structure. …”
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Oxidized-driven and strain-tunable anisotropic effects in crystalline graphene oxides
Published 2025-01-01“…Herein, we reveal that highly anisotropic semiconductors and strongly tilted Dirac cones are discovered in a family of crystalline graphene oxide named cGO-nz. …”
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Enhanced UVC Responsivity of Heteroepitaxial α-Ga<sub>2</sub>O<sub>3</sub> Photodetector with Ultra-Thin HfO<sub>2</sub> Interlayer
Published 2025-07-01Subjects: Get full text
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Optimization design of insulation and parasitic parameters for medium-voltage hybrid ANPC busbars
Published 2025-07-01Subjects: Get full text
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Long wavelength infrared sensor array using VO2 microstructures fabricated on visible GaN LED
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Nanodimensional semiconductors and dielectrics: achievements of nanoelectronics and novel materials
Published 2019-06-01“…Electronic and optical properties of nanostructured porous silicon, quantum films and wires of silicon and germanium, nanodiamonds, nanostructured oxides of metals and semiconductors, nanostructures with the effect of tunneling magnetoresistance, nanodimensional HfO2 films in the structures with resistive switching are summarized. …”
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Recent Advances in Resistive Gas Sensors: Fundamentals, Material and Device Design, and Intelligent Applications
Published 2025-06-01“…In terms of materials, metal oxide semiconductors, conductive polymers, carbon-based nanomaterials, and their composites have demonstrated enhanced sensitivity and selectivity through strategies such as doping, surface functionalization, and heterojunction engineering, while also enabling reduced operating temperatures. …”
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The Characteristics of the pin-Structure with a Discrete Metallic Surface i-Region
Published 2020-02-01“…The pin-structure under study consisted of p + -boron-doped region; n + -phosphorusdoped region; i-phosphorus-doped region; semi-insulating substrate; metallization of the substrate; polysilicon control gate; and a silicon oxide dielectric layer. …”
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Exploring BEOL-Compatible Ferroelectricity in Ultra-Thin Hafnium–Zirconium Oxide: Thermal Budget, FTJ Characteristics, and Device Reliability
Published 2025-01-01“…The use of hafnium-zirconium oxide (HZO) in ferroelectric memory has garnered significant interest due to its excellent scalability and compatibility with complementary metal-oxide-semiconductor and back-end-of-line processes. …”
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Biosynthesis and characterization of copper oxide nanoparticles from Plumbago zeylanica leaf extract for antibacterial and antioxidant activities
Published 2025-08-01“…Abstract In recent years, green synthesis has become a prevalent method for producing metallic oxide nanoparticles, preferred over traditional physical and chemical processes because of its low toxicity, cost-effectiveness, and environmental friendliness. …”
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Controllable growth of MoO3 dielectrics with sub-1 nm equivalent oxide thickness for 2D electronics
Published 2025-07-01“…By further vertically stacking n-MoS2 with p-WSe2 transistors, the complementary metal-oxide-semiconductor (CMOS) inverters are achieved, demonstrating its application potential in high-density digital logical circuits. …”
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XPS study and electronic structure of non-doped and Cr+ ion implanted CuO thin films
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Synthesis of Copper Ferrite (CuFe2O4) doped 3D Reduced Graphene Oxide-Based Solar Absorber for Solar Desalination of Saline Water
Published 2025-07-01“…CuFe2O4 is a notable p-type semiconductor metal oxide with a relatively narrow band gap (~1.4 eV), able to effectively absorb a broadband range of sunlight and convert it into heat, making it well-suited for solar-to-thermal energy conversion applications. …”
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