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    Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review by J. Ajayan, Asisa Kumar Panigrahy, Sachidananda Sen, Maneesh Kumar, Shubham Tayal

    Published 2025-01-01
    “…The time-dependent breakdown of the AlGaN-p-GaN/metal stack (due to avalanche multiplication) is a serious reliability concern in p-GaN HEMTs. …”
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