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    Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS<sub>2</sub> Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments

    Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS<sub>2</sub> Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments by Khalil Tamersit, Abdellah Kouzou, José Rodriguez, Mohamed Abdelrahem

    Published 2024-12-01
    Subjects: “…transition metal dichalcogenide (TMD)…”
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