Showing 61 - 80 results of 244 for search '"transistor"', query time: 0.08s Refine Results
  1. 61
  2. 62

    An energy‐efficient dynamic comparator in Carbon Nanotube Field Effect Transistor technology for successive approximation register ADC applications by Hamid Mahmoodian, Mehdi Dolatshahi, S. Mohammadali Zanjani, Mohammad Amin Honarvar

    Published 2022-07-01
    “…Abstract In this paper, a latch‐based energy‐efficient dynamic comparator is presented in Carbon Nanotube Field Effect Transistor (CNTFET) technology. The proposed comparator consists of two main stages: pre‐amplifier and latch. …”
    Get full text
    Article
  3. 63

    Digital Mini-LED Lighting Using Organic Thin-Film Transistors Reaching over 100,000 Nits of Luminance by Chia-Hung Tsai, Yang-En Wu, Chien-Chi Huang, Li-Yin Chen, Fang-Chung Chen, Hao-Chung Kuo

    Published 2025-01-01
    “…This paper demonstrates the use of organic thin-film transistors (OTFTs) to drive active digital mini light-emitting diode (mini-LED) backlights, aiming to achieve exceptional display performance. …”
    Get full text
    Article
  4. 64
  5. 65
  6. 66
  7. 67

    Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress by Dongsheng Hong, Bing Zhang, Dongli Zhang, Mingxiang Wang, Rongxin Wang

    Published 2024-01-01
    “…Degradation phenomena featured with positive shift of the on-state transfer curve are reported for the amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) under negative bias illumination stress (NBIS). …”
    Get full text
    Article
  8. 68

    An Improved Topology of Isolated Bidirectional Resonant DC-DC Converter Based on Wide Bandgap Transistors for Electric Vehicle Onboard Chargers by Md. Tanvir Shahed, A. B. M. Harun-Ur Rashid

    Published 2023-01-01
    “…Again, the proposed converter design is based on wide bandgap (WBG) transistor switches that operate at MHz-level switching frequency to achieve high power density, high efficiency, and high compactness. …”
    Get full text
    Article
  9. 69

    A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave Wireless Transmission by Hualian Tang, Ailan Tang, Weifeng Liu, Jingxiang Huang, Jianjun Song, Wenjie Sun

    Published 2024-12-01
    “…This paper proposes and designs a silicon-based negative capacitance field effect transistor (NCFET) to replace conventional MOSFETs as the rectifying device in RF-DC circuits, aiming to enhance the rectification efficiency under low-power density conditions. …”
    Get full text
    Article
  10. 70

    A Complementary Low Schottky Barrier Nonvolatile Bidirectional Reconfigurable Field Effect Transistor Based on Dual Metal Silicide S/D Contacts by Liu Xi, Ya Wang, Meile Wu, Lin Qi, Mengmeng Li, Shouqiang Zhang, Xiaoshi Jin

    Published 2023-01-01
    “…In this work, a high-performance nanoscale complementary low Schottky barrier (CLSB) nonvolatile bidirectional reconfigurable field effect transistor (NBRFET) based on dual metal silicide source/drain (S/D) contacts (CLSB-NBRFET) is proposed. …”
    Get full text
    Article
  11. 71
  12. 72
  13. 73

    Design of Analog Signal Processing Applications Using Carbon Nanotube Field Effect Transistor-Based Low-Power Folded Cascode Operational Amplifier by Varsha S. Bendre, A. K. Kureshi, Saurabh Waykole

    Published 2018-01-01
    “…The carbon nanotube field effect transistors (CNFETs) have been reconnoitred as the stimulating aspirant for the future generations of integrated circuit (IC) devices. …”
    Get full text
    Article
  14. 74
  15. 75
  16. 76
  17. 77
  18. 78

    High-Efficiency Continuous Wave 16 W–7.5 GHz Power Amplifier With a GaN Transistor in Plastic Packaging by Alireza Sadeghi-Fard, Sayyed-Hossein Javid-Hosseini, Vahid Nayyeri, Paolo Colantonio

    Published 2025-01-01
    “…Using a plastic-packaged GaN transistor and high-efficiency design techniques, a power amplifier for the space-to-earth satellite was designed and fabricated. …”
    Get full text
    Article
  19. 79
  20. 80