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    1380 nm VCSELs using surface-activated bonding of GaAs-based DBRs on a Ge substrate

    1380 nm VCSELs using surface-activated bonding of GaAs-based DBRs on a Ge substrate by Tomomasa Watanabe, Mikihiro Yokozeki, Masashi Takanohashi, Michinori Shiomi, Hiroshi Nakajima, Masayuki Tanaka, Daiji Kasahara, Noriko Kobayashi, Noriyuki Futagawa

    Published 2025-01-01
    Subjects: “…surface-activated bonding…”
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