IGBTs: Concept, Development and New Structures by Florin Udrea

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A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations by Marco Boccarossa, Kyrylo Melnyk, Arne Benjamin Renz, Peter Michael Gammon, Viren Kotagama, Vishal Ajit Shah, Luca Maresca, Andrea Irace, Marina Antoniou

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Bipolar to unipolar conversion in superjunction MOSFETs during resonant switching by H. Kang, F. Udrea

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Gallium oxide (Ga2O3) heterogeneous and heterojunction power devices by Bochang Li, Yibo Wang, Zhengdong Luo, Wenhui Xu, Hehe Gong, Tiangui You, Xin Ou, Jiandong Ye, Yue Hao, Genquan Han

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Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride by Kelly Turner, Gerard Colston, Katarzyna Stokeley, Andrew Newton, Arne Renz, Marina Antoniou, Peter Gammon, Philip Mawby, Vishal Shah

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Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor by Kuan-Min Kang, Jia-Wei Hu, Chih-Fang Huang

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C_OSS Losses in Resonant Converters by Giuseppe Samperi, Antonio Laudani, Nunzio Salerno, Alfio Scuto, Marco Ventimiglia, Santi Agatino Rizzo

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Recent research progress of SiC superjunction devices by ZHANG Jinping, ZHANG Kun, CHEN Wei, WANG Jie, ZHANG Bo

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Normally-Off Trench-Gated AlGaN/GaN Current Aperture Vertical Electron Transistor with Double Superjunction by Jong-Uk Kim, Do-Yeon Park, Byeong-Jun Park, Sung-Ho Hahm

Subjects: “…superjunction…”
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