Showing 441 - 460 results of 998 for search '"silicon"', query time: 0.06s Refine Results
  1. 441
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  3. 443

    Comparative Study of Two Commercial Photovoltaic Panels under Natural Sunlight Conditions by Daniel T. Cotfas, Petru A. Cotfas

    Published 2019-01-01
    “…The temperature of the monocrystalline silicon panels is lower than that of the amorphous silicon panel in the majority of measurements. …”
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    Article
  4. 444

    Refinement of the Co-Content function, through an integration of a polynomial fit of $$I-{I}_{sc}$$ I - I sc . Part 2 application to experimental current–voltage curves by Victor-Tapio Rangel-Kuoppa

    Published 2025-01-01
    “…., the shunt resistance $$\left({R}_{sh}\right)$$ R sh , the series resistance $$\left({R}_{s}\right)$$ R s , the ideality factor $$\left(n\right)$$ n , the light current $$\left({I}_{lig}\right)$$ I lig , and the saturation current $$\left({I}_{sat}\right)$$ I sat , (within the one-diode solar cell model), is implemented on reported Current–Voltage (IV) curves found in the literature, both for laboratory made solar cells, as for and single-crystalline silicon (x-Si), multi-crystalline silicon (m-Si), cadmium telluride (CdTe), copper indium gallium selenide (CIGS), amorphous silicon (a-Si) tandem and triple-junction, amorphous silicon/crystalline silicon, heterojunction with intrinsic thin-layer (HIT), and amorphous silicon/microcrystalline silicon photovoltaic modules.…”
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  5. 445

    Synthesis and Modeling of Temperature Distribution For Nanoparticles Produced Using Nd:YAG Lasers by Mu’ataz S. Hassan, Ziad A. Taha, Bassam G. Rasheed

    Published 2016-01-01
    “…Nanosecond pulses of Nd:YAG laser were employed to produce silver and silicon nanoparticles by laser ablation process in liquid. …”
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    Article
  6. 446

    Nickel, copper and cobalt coalescence in copper cliff converter slag by Wolf A., Mitrašinović A.M.

    Published 2016-01-01
    “…Addition of copper-silicon alloys with low silicon content was efficient in copper recovery but coalescence of the other metals was low. …”
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    Article
  7. 447

    Solar Module Fabrication by A. El Amrani, A. Mahrane, F. Y. Moussa, Y. Boukennous

    Published 2007-01-01
    “…In this paper, we present the encapsulation process we have developed at Silicon Technology Unit (UDTS) for monocrystalline silicon solar cells. …”
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    Article
  8. 448

    Pixel Imaging Method, Transport Phenomenon in Sizes From Nano, Micro, and Milli Scale Pore Membrane by Vishal Nandigana

    Published 2025-01-01
    “…We study the ion transport for silicon nitride sputtered with silicon dioxide (Si3N4–SiO2) nanopore membrane, graphene, and molybdenum disulfide (MoS2) nanopore membrane. …”
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  9. 449
  10. 450

    SSNMR confirms silicate ion substitution in the apatitic structure of 0.8wt% Si hydroxyapatite by Marc-Krystelle Mafina, Rory M. Wilson, Gregory J. Rees, Peter Gierth, Alice C. Sullivan, Karin A. Hing

    Published 2023-11-01
    “… This study investigates the structural location of silicon present in ‘silicate-substituted’ apatite. …”
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  11. 451
  12. 452

    Substrate Effect on Plasma Clean Efficiency in Plasma Enhanced Chemical Vapor Deposition System by Shiu-Ko JangJian, Ying-Lang Wang

    Published 2007-01-01
    “…In this study, the plasma clean rate (PCR) of silicon oxide is investigated after the silicon nitride deposited on Cu and silicon oxide substrates by remote plasma system (RPS), respectively. …”
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  13. 453
  14. 454

    Reliability Express Control of the Gate Dielectric of Semiconductor Devices by V. A. Solodukha, G. G. Chigir, V. A. Pilipenko, V. A. Filipenya, V. A. Gorushko

    Published 2018-12-01
    “…Thermal treatment of the initial silicon wafers and gate dielectric makes it possible to expand the error-free running time up to 25.2 years, i.e.1.89 times more, than in the standard process of the pyrogenic oxidation and 1.5 times more, than under application of the rapid thermal treatment of the initial silicon wafers only.…”
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  15. 455
  16. 456

    Modeling Surface Recombination at the p-Type Si/SiO2Interface via Dangling Bond Amphoteric Centers by Moustafa Y. Ghannam, Husain A. Kamal

    Published 2014-01-01
    “…An integral model is proposed for recombination at the silicon/silicon dioxide (Si/SiO2) interface of thermally oxidized p-type silicon via Pb amphoteric centers associated with surface dangling bonds. …”
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  17. 457

    Nanostructured crystallization of casting alloys by E. I. Marukovich, V. Yu. Stetsenko, A. V. Stetsenko

    Published 2022-10-01
    “…Primary and eutectic microcrystals of silumin are formed from elementary nanocrystals of aluminum and silicon, free atoms of aluminum and silicon, aluminum-silicon complexes.…”
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  18. 458

    Mechanical and Frictional Behavior of Jute-Textile-Reinforced Polymer Composites With Matrix Modification by Farhin Tabassum, M. R. Asekin, M. Salim Kaiser, S. Reaz Ahmed

    Published 2025-01-01
    “…Three different matrix modifiers, namely, carbon, silicon, and aluminum powders are considered for the modification of polymeric material used in the sandwich structured biodegradable jute-textile-reinforced composites. …”
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  19. 459

    Improving photovoltaic performance through doped graphene heterostructure modules by Mansi Rana, Preetika Sharma

    Published 2025-06-01
    “…To improve the efficiency of conventional silicon photovoltaic (PV) cells, silicon is being replaced by graphene material which not only reduces the reflectance of solar energy but also supports full spectrum solar coverage. …”
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  20. 460

    Preparation and photoelectric properties of Si:B nanowires with thermal evaporation method. by Yang Feng, Ping Liang, Ziwen Xia, Weiye Yang, Hongyan Peng, Shihua Zhao

    Published 2025-01-01
    “…We have successfully prepared a significant number of nanowires from non-toxic silicon sources. Compared to the SiO silicon source used in most other articles, our preparation method is much safer. …”
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    Article