Showing 1 - 20 results of 53 for search '"semiconductor"', query time: 0.07s Refine Results
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    Vacuum-tube and Semiconductor Electronics / by Millman,Jacob

    Published 1958
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    Book
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    WELCOMING THE SEMICONDUCTOR INDUSTRY IN GHANA: CHALLENGES AND RECOMMENDATIONS – A CASE STUDY by GIDEON ADOM-BAMFI, DANIEL OPOKU, BENJAMIN KOMMEY

    Published 2021-01-01
    Subjects: “…semiconductor industry, semiconductor, electronics, Ghana…”
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    Article
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    Attosecond metrology of vacuum-ultraviolet high-order harmonics generated in semiconductors via laser-dressed photoionization of alkali metals by Arjun Nayak, Debobrata Rajak, Balázs Farkas, Camilio Granados, Philipp Stammer, Javier Rivera-Dean, Theocharis Lamprou, Katalin Varju, Yann Mairesse, Marcelo F. Ciappina, Maciej Lewenstein, Paraskevas Tzallas

    Published 2025-02-01
    “…Abstract Semiconductor crystals driven by strong mid-infrared pulses offer advantages for studying many-body physics and ultrafast optoelectronics via high-harmonic generation. …”
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    Article
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    A Novel Sustainable Semiconductor/Metal-organic Framework Coated Electret Filter for Simultaneous Removal of PM2.5 and VOCs by Yu Zhang, Zan Zhu, Wei-Ning Wang, Sheng-Chieh Chen

    Published 2023-03-01
    “…This research sheds light on the development of semiconductor@MOF coated electret media to simultaneously remove particulate and gaseous pollutants to improve indoor air quality with low energy consumption.…”
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    Article
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    Microelectronic Circuit Design / by Jaeger, Richard C.

    Published 2016
    Subjects:
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    Book
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    MESO-CMOS Hybrid Circuits With Time-Multiplexing Technique for Energy and Area-Efficient Computing in Memory by Tzuping Huang, Linran Zhao, Yiming Han, Hai Li, Ian A. Young, Yaoyao Jia

    Published 2025-01-01
    Subjects: “…Beyond-complementary metal–oxide–semiconductor (CMOS) logic…”
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    Article
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    Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs by An-Chen Liu, Hsin-Chu Chen, Po-Tsung Tu, Yan-Lin Chen, Yan-Chieh Chen, Po-Chun Yeh, Chih-I Wu, Shu-Tong Chang, Tsung-Sheng Kao, Hao-Chung Kuo

    Published 2025-01-01
    “…The objective of this study is to optimize the trade-off between threshold voltage (V _TH ) and maximum drain current (I _D,max ) in recessed gate AlGaN/GaN metal insulator semiconductor high electron mobility transistor (MISHEMT) using atomic layer etching (ALE) technology, with technical computer-aided design (TCAD) simulations assisting in the analysis of the underlying mechanisms to demonstrate the high performance and reliability of GaN-based power application. …”
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