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Lighting the way forward: The bright future of photonic integrated circuits
Published 2025-01-01Subjects: Get full text
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122
Impact of Mn/Co substitution on magnetoelectric and structural properties of ZnO nanostructures thin films
Published 2025-02-01Subjects: Get full text
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123
X-Ray Performance of SiC NPN Radiation Detector
Published 2024-12-01Subjects: Get full text
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Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach
Published 2025-01-01Subjects: Get full text
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126
Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts
Published 2025-01-01Subjects: “…semiconductors…”
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127
Elastic Properties and the Band Gap of AlNxP1-x Semiconductor Alloy: A Comparative Study of Various Ab Initio Approaches
Published 2016-01-01“…Structural and elastic properties of AlNxP1-x, a novel semiconductor alloy, are studied from the first principles in both zinc-blende and wurtzite structures. …”
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128
Classification of Silicon (Si) Wafer Material Defects in Semiconductor Choosers using a Deep Learning ShuffleNet-v2-CNN Model
Published 2022-01-01“…The silicon wafer is one of the raw materials used to make semiconductor chipsets. Semiconductor failure or dysfunction could be the result of defects in the layers of this material. …”
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Noncontact Monitoring and Imaging of the Operation and Performance of Thin‐Film Field‐Effect Transistors
Published 2025-02-01Subjects: “…amorphous oxide semiconductor…”
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131
Warpage in wafer-level packaging: a review of causes, modelling, and mitigation strategies
Published 2025-02-01Subjects: Get full text
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132
Improving the Selectivity of Metal Oxide Semiconductor Sensors for Mustard Gas Simulant 2-Chloroethyl Ethyl Sulfide by Combining the Laminated Structure and Temperature Dynamic Modulation
Published 2025-01-01“…Insufficient selectivity is a major constraint to the further development of metal oxide semiconductor (MOS) sensors for chemical warfare agents, and this paper proposed an improved scheme combining catalytic layer/gas-sensitive layer laminated structure with temperature dynamic modulation for the Mustard gas (HD) MOS sensor. …”
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A 22% Efficient Semiconductor/Liquid Junction Solar Cell—the Photoelectrochemical Behavior of n-WSe2 Electrodes in the Presence of I2/I- in Aqueous Electrolyte
Published 1988-01-01“…One of the most efficient semiconductor/liquid-junction photoelectrochemical cells (PEC) reported to date is presented. …”
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136
Comparative Study of SiO2, Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices
Published 2012-01-01“…In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2 gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). …”
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137
500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit
Published 2023-07-01Subjects: Get full text
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138
Enhanced sensing capabilities of UV–visible p-n and p-i-n photodiodes using unique layer and contact configurations
Published 2025-02-01Subjects: Get full text
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139
Measuring. Monitoring. Management. Control
Published 2024-12-01Subjects: “…semiconductor membrane…”
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