Showing 121 - 140 results of 685 for search '"semiconductor"', query time: 0.06s Refine Results
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    Elastic Properties and the Band Gap of AlNxP1-x Semiconductor Alloy: A Comparative Study of Various Ab Initio Approaches by M. P. Polak, M. J. Winiarski, K. Wittek, P. Scharoch

    Published 2016-01-01
    “…Structural and elastic properties of AlNxP1-x, a novel semiconductor alloy, are studied from the first principles in both zinc-blende and wurtzite structures. …”
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  8. 128

    Classification of Silicon (Si) Wafer Material Defects in Semiconductor Choosers using a Deep Learning ShuffleNet-v2-CNN Model by Rajesh Doss, Jayabrabu Ramakrishnan, S. Kavitha, S. Ramkumar, G. Charlyn Pushpa Latha, Kiran Ramaswamy

    Published 2022-01-01
    “…The silicon wafer is one of the raw materials used to make semiconductor chipsets. Semiconductor failure or dysfunction could be the result of defects in the layers of this material. …”
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    Improving the Selectivity of Metal Oxide Semiconductor Sensors for Mustard Gas Simulant 2-Chloroethyl Ethyl Sulfide by Combining the Laminated Structure and Temperature Dynamic Modulation by Yadong Liu, Siyue Zhao, Lijuan You, Yong Xu, Renjun Si, Shunping Zhang

    Published 2025-01-01
    “…Insufficient selectivity is a major constraint to the further development of metal oxide semiconductor (MOS) sensors for chemical warfare agents, and this paper proposed an improved scheme combining catalytic layer/gas-sensitive layer laminated structure with temperature dynamic modulation for the Mustard gas (HD) MOS sensor. …”
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    A 22% Efficient Semiconductor/Liquid Junction Solar Cell—the Photoelectrochemical Behavior of n-WSe2 Electrodes in the Presence of I2/I- in Aqueous Electrolyte by G. Campet, C. Azaiez, F. Levy, H. Bourezc, J. Claverie

    Published 1988-01-01
    “…One of the most efficient semiconductor/liquid-junction photoelectrochemical cells (PEC) reported to date is presented. …”
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  16. 136

    Comparative Study of SiO2, Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices by J. H. Yum, J. Oh, Todd. W. Hudnall, C. W. Bielawski, G. Bersuker, S. K. Banerjee

    Published 2012-01-01
    “…In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2 gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). …”
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    Measuring. Monitoring. Management. Control by V.S. Volkov, S.N. Bazykin, V.A. Bardin, K.S. Samohina, N.V. Volkova

    Published 2024-12-01
    Subjects: “…semiconductor membrane…”
    Article
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