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Highly Strained AlGaAs‐GaAsP Nanomembranes‐Based High‐Performance Diode
Published 2025-02-01“…Abstract Nanomembranes (NMs) made from single‐crystalline inorganic semiconductors offer unique properties, such as flexibility, transparency, and tunable bandgaps, making them suitable for complex device integration and next‐generation high‐power devices. …”
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563
Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates
Published 2024-01-01“…With the help of a simplified TCAD model of the GaN-on-Si stack, we link this behavior to slow charge redistribution in the C-doped buffer continuously modifying the flat-band voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\text {FB}}$ </tex-math></inline-formula>) of the Metal-Insulator-Semiconductor (MIS) structure. Free carrier transport across the buffer is shown to have the greatest contribution on the large time constants, highlighting the importance of vertical transport paths in GaN-on-Si stacks.…”
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564
Development of a novel strategy for the quantification of ultra-trace impurity elements in high-purity magnesium using inductively coupled plasma tandem mass spectrometry
Published 2025-01-01“…High purity magnesium is not only an important basic raw material for semiconductor and electronics industries, but also a promising new generation of electrochemical energy storage materials and biomedical materials. …”
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565
Zwitterion Effect of Cow Brain Protein towards Efficiency Improvement of Dye-Sensitized Solar Cell (DSSC)
Published 2020-01-01“…Dye-Sensitized Solar Cell (DSSC) constitutes a solar cell using natural dyes from plants that are adsorbed in semiconductors to convert solar energy into electrical energy. …”
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566
Field measurement of atmospheric CO₂ column abundance based on portable laser heterodyne radiometer
Published 2025-02-01“…The instrument modulates the solar radiation using a fiber optic switch and amplifies the solar radiation through a semiconductor optical amplifier. The local oscillator laser is progressively scanned at the strong absorption characteristic of 1572.02 nm. …”
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567
Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communicati...
Published 2025-03-01“…An innovative GaN-channel MOSHEMT (Metal-oxide-semiconductor-high-electron-mobility-transistor) featuring AlGaN aback barrier and AlN barrier is reported. …”
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568
Dye-based fluorescent organic nanoparticles made from polar and polarizable chromophores for bioimaging purposes: a bottom-up approach
Published 2024-04-01“…Among them luminescent metal-, semiconductor- or oxide-based “hard” nanoparticles have been the most widely used. …”
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569
Synaptic transistor implementing potentiation or depression via field distribution modulation of dual dielectric layers by single-polarity pulsed voltage stimuli
Published 2025-03-01“…The device is fabricated using a standard complementary metal-oxide-semiconductor process and is composed of a TiO2 channel deposited over a dual dielectric of SiOx on Al2O3. …”
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570
Preparation of AgBiS2 thin films with vapor-assisted solution method for flexible near-infrared photodetectors
Published 2025-04-01“…Using a simple metal/semiconductor/metal device as a demonstration, the as-prepared AgBiS2-based flexible NIR photodetectors (NPDs) exhibit a high linear dynamic range of 103.6 dB. …”
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571
Low Thermal Resistance of Diamond‐AlGaN Interfaces Achieved Using Carbide Interlayers
Published 2025-02-01“…This study provides a foundation for future research in improving thermal properties of semiconductor devices through interface engineering and advanced measurement methodologies.…”
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572
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Self-assembled biodegradable herbal-based nanoflower decorative magnesium implants combine therapy with bone regeneration
Published 2025-01-01“…Moreover, Cur-Fe coating exhibits remarkable narrow gap semiconductor characteristics, which can generate reactive oxygen species (ROS) and demonstrated excellent antibacterial effect under simulated sunlight (SSL) irradiation. …”
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574
Observation of ultraviolet photothermoelectric bipolar impulse in gallium-based heterostructure nanowires
Published 2025-01-01“…The device achieves exceptional responsivity (17.1 mA/W) and remarkably fast speed (8.8 ms) at 0 V, surpassing existing semiconductor electrochemical cells. This bipolar ultraviolet impulse detection mode harnesses light-induced heat for electricity generation, enabling innovative bidirectional encryption communication capabilities. …”
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575
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576
Heterogeneous integration of amorphous silicon carbide on thin film lithium niobate
Published 2025-01-01“…Despite numerous demonstrations of high-performance LN photonics, processing lithium niobate remains challenging and suffers from incompatibilities with standard complementary metal–oxide–semiconductor (CMOS) fabrication lines, limiting its scalability. …”
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577
Spectroscopic and Morphological Studies of Metal-Organic and Metal-Free Dyes onto Titania Films for Dye-Sensitized Solar Cells
Published 2013-01-01“…We have investigated the spectroscopic behavior of three different sensitizers adsorbed onto titania thin films in order to gain information both on the electron transfer process from dye to titania and on the anchorage of the chromophore onto the semiconductor. We have examined by UV-Vis and fluorescence spectroscopy the widely used ruthenium complex cis-di(thiocyanato)bis(2,2′-bipyridyl-4,4′-dicarboxylato)ruthenium(II) (N719), the more recently developed organic molecular 3-(5-(4-(diphenylamino)styryl)thiophen-2-yl)-2-cyanoacrylic acid (D5), and a push-pull zinc phthalocyanine sensitizer (ZnPc). …”
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578
Effect of Deposition Temperature and Thermal Annealing on the Properties of Sputtered NiO<i><sub>x</sub></i>/Si Heterojunction Photodiodes
Published 2025-01-01“…NiO<i><sub>x</sub></i> is a p-type semiconductor with excellent stability, which makes it interesting for a wide range of applications. …”
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579
Boron phosphide microwires based on-chip electrocatalytic oxygen evolution microdevice
Published 2025-02-01“…Electrical property and band structure analysis revealed BP as a one-dimensional p-type semiconductor with a wide band gap. We constructed an on-chip electrocatalytic microdevice using individual BP microwires to evaluate OER performance. …”
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580