Electrodeposited CdTe solar cells using low-purity Cd precursors & the effect of chemical purity by Ashfaque E. Alam, Hussain I. Salim, Ayotunde A. Ojo, Imyhamy M. Dharmadasa

“…Glass/fluorine-doped tin oxide (FTO) substrates have been used to electrodeposit the semiconductor layers. The as-deposited (AD) layers were heat-treated in the air with CdCl2. …”
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Insulator–metal transition in VO2 film on sapphire studied by broadband dielectric spectroscopy by Arsenii A. Gavdush, Vladislav A. Zhelnov, Kirill B. Dolganov, Alexander A. Bogutskii, Sergey V. Garnov, Maria G. Burdanova, Dmitry S. Ponomarev, Qiwu Shi, Kirill I. Zaytsev, Gennadii A. Komandin

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An impermeable copper surface monolayer with high-temperature oxidation resistance by Su Jae Kim, Young-Hoon Kim, Bipin Lamichhane, Binod Regmi, Yousil Lee, Sang-Hyeok Yang, Seon Je Kim, Min-Hyoung Jung, Jae Hyuck Jang, Hu Young Jeong, Miaofang Chi, Maeng-Je Seong, Hak Soo Choi, Seong-Gon Kim, Young-Min Kim, Se-Young Jeong

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Fabrication of Cu: ZnO thin film sensor for ethanol vapor detection by Robin Simkhada, Dalton R. Gibbs, Soma Dhakal, Dipak Oli, Rishi Ram Ghimire, Deependra Das Mulmi, Leela Pradhan Joshi

“… For a long time, metal oxide semiconductor (MOS) based gas sensors have been widely used in domestic, commercial, and industrial sectors to detect harmful gases. …”
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Novel Insights into Surface Energies and Enhanced Gas-Sensing Capabilities of ZnGa₂O₄(111) via Ab Initio Studies by Cheng-Lung Yu, Yan-Cheng Lin, Sheng-Yuan Jhang, Jine-Du Fu, Yi-Chen Chen, Po-Liang Liu

“…This study unveils the previously unexplored roles of Ga-Zn-O-terminated ZnGa₂O₄ surfaces in optimizing semiconductor-based gas sensors, offering both oxidative and reductive potentials and making them versatile for diverse applications.…”
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64Cu-chelated InP/ZnSe/ZnS QDs as PET/fluorescence dual-modal probe for tumor imaging by Ziyu Zhao, Ayaka Otsuka, Noriko Nakamura, Toshifumi Tatsumi, Kazuhiro Nakatsui, Taiki Tsuzukiishi, Tomo Sakanoue, Kenji Shimazoe, Seiichi Ohta

“…Positron Emission Tomography (PET)/fluorescence dual-modal imaging combines deep penetration and high resolution, making it a promising approach for tumor diagnostics. Semiconductor nanocrystals, known as quantum dots (QDs), have garnered significant attention for fluorescence imaging owing to their tunable emission wavelength, high quantum yield, and excellent photostability. …”
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A 5.5–7.5‐GHz band‐configurable wake‐up receiver fully integrated in 45‐nm RF‐SOI CMOS by Rui Ma, Florian Protze, Frank Ellinger

“…Abstract This work investigates a 5.5–7.5‐GHz band‐configurable duty‐cycled wake‐up receiver (WuRX) fully implemented in a 45‐nm radio‐frequency (RF) silicon‐on‐insulator (SOI) complementary‐metal‐oxide‐semiconductor (CMOS) technology. Based on an uncertain intermediate frequency (IF) super‐heterodyne receiver (RX) topology, the WuRX analogue front‐end (AFE) incorporates a 5.5–7.5‐GHz band‐tunable low‐power low‐noise amplifier, a low‐power Gilbert mixer, a digitally controlled oscillator (DCO), a 100‐MHz IF band‐pass filter (BPF), an envelope detector, a comparator, a pulse generator and a current reference. …”
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Unveiling the Electrocatalytic Performances of the Pd-MoS₂ Catalyst for Methanol-Mediated Overall Water Splitting by Aviraj M. Teli, Sagar M. Mane, Rajneesh Kumar Mishra, Wookhee Jeon, Jae Cheol Shin

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A Comparative Analysis of Laser-Ablated Surface Characteristics Between the Si Face and C Face of Silicon Carbide Substrates by Hsin-Yi Tsai, Yu-Hsuan Lin, Kuo-Cheng Huang, J. Andrew Yeh, Yi Yang, Chien-Fang Ding

“…Silicon carbide (SiC) has significant potential as a third-generation semiconductor material due to its exceptional thermal and electronic properties, yet its high hardness and brittleness make processing costly and complex. …”
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Alteration of Mastication Force via Intraoral Closed-Loop Electrical Stimulation by Junxiang Zheng, Bing Jiang, Saurabh Biswas, Su Young Lee, Erin Ealba Bumann, Teresa E. Lever, Jeonghee Kim, Hangue Park

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Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors by Soroush Ghandiparsi, Bikram Chatterjee, Jimmy‐Xuan Shen, Miranda S. Gottlieb, Clint D. Frye, Joseph D. Schneider, Ryan D. Muir, Brandon W. Buckley, Sara E. Harrison, Qinghui Shao, Joel B. Varley, Lars F. Voss

“…Aluminum nitride (AlN), an emerging ultra‐wide band gap (UWBG) III–V semiconductor, offers promising optoelectronic properties and superior thermal conductivity (>300 Wm−1K−1 at 298° K, compared to BSO's 3.29 Wm−1K−1). …”
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Short-Circuit Performance Analysis of Commercial 1.7 kV SiC MOSFETs Under Varying Electrical Stress by Shahid Makhdoom, Na Ren, Ce Wang, Yiding Wu, Hongyi Xu, Jiakun Wang, Kuang Sheng

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Modern challenges facing electric vehicle adoption: a review of barriers to adoption, supply chain challenges, and equity by Hala Alshahapy, Joe F Bozeman III, Sanya Carley, Destenie Nock, Daniel Matisoff

“…Key disruptors include critical mineral scarcity, semiconductor shortages, and international trade and COVID-19-related restrictions, complicating efforts to overcome adoption hurdles. …”
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Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics by Mohit Kumar, Laurent Xu, Timothée Labau, Jérôme Biscarrat, Simona Torrengo, Matthew Charles, Christophe Lecouvey, Aurélien Olivier, Joelle Zgheib, René Escoffier, Julien Buckley

“…Additionally, polarization-induced free charges at the metal–semiconductor interface reduced band bending, thereby enhancing carrier transport. …”
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Performance Optimization of Fabricated Nanosheet GAA CMOS Transistors and 6T-SRAM Cells via Source/Drain Doping Engineering by Xuexiang Zhang, Qingkun Li, Lei Cao, Qingzhu Zhang, Renjie Jiang, Peng Wang, Jiaxin Yao, Huaxiang Yin

“…In this paper, special optimizations to source/drain (S/D) doping engineering including spacer bottom footing (SBF) and refining the lightly doped drain (LDD) implantation process are explored to enhance both fabricated complementary metal oxide semiconductor (CMOS) NSFETs and their 6T-SRAM cells. …”
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Monodispersed Iron Selenide Nanoparticles United with Carbon Nanotubes for Highly Reversible Zinc–Air Batteries by Hua Zhang, Tong Zeng, Jiale Ma, Yue Jiang, Yang Huang, Yuxin Cheng, Haifeng Ye, Cuiyun Zeng, Chenghui Zeng, Minshen Zhu, Shuiliang Chen

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Surface crystal-orientation-dependent second-order nonlinear optical properties of cubic boron arsenide (c-BAs) by Lipeng Zhu, Yachao Ma, Chuyi Zhou, Tanwen Lai, Aochi Jia, Yipeng Zheng, Kaili Ren, Dongdong Han, Jun Dong, Ze Xue, Yani Ren, Qiyi Zhao, Chuan He, Jiming Zheng

“…The energy band structure demonstrates that c-BAs is an indirect bandgap semiconductor. The isotropic complex dielectric functions and the derived linear optical parameters have been obtained, such as complex refractive index and reflectivity. …”
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Near Junction Integration of Vapor Chamber for Transient Thermal Performance Improvements of SiC Power Module by Wei Mu, Laili Wang, Haoyuan Jin, Borong Hu, Binyu Wang, Jinfeng Zhang, Liang Wang, Teng Long

“…Power semiconductor modules are mostly stressed when faced with large junction temperature variations, leading to failures such as bond wire lift-off and solder fatigue. …”
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The study of five-level inverters with various PWM by O. A. Lysenko, A. A. Okhotnikov, V. A. Zakharenko, V. Yu. Kobenko

“…The relevance of the research is indicated by the increasing demands of technological processes for the economic use of electric energy, the reduction in power consumed by semiconductor converters, and also to the level of regulated reactive power. …”
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Polyoxovanadate-modified SnO2 electron transport layer for perovskite photodetectors by Ziting Liu, Yijia Hao, Jing Zhang, Yi He, Weilin Chen

“…Polyoxovanadates (POVs), as semiconductor-like molecules, exhibit good redox and excellent optical properties, which can regulate the energy band structure of SnO2. …”
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