GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH4)2SX + UV Interface Treatment Technology by Chao-Wei Lin, Hsien-Chin Chiu

“…This study examines the praseodymium-oxide- (Pr2O3-) passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH4)2SX + ultraviolet (UV) illumination. …”
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A high speed processor for elliptic curve cryptography over NIST prime field by Xianghong Hu, Xueming Li, Xin Zheng, Yuan Liu, Xiaoming Xiong

“…On a 55 nm complementary metal oxide semiconductor application specific integrated circuit platform, the processor costs 463k gates and requires 0.028 ms for one SM. …”
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Photoelectrochemical Stability and Alteration Products of n-Type Single-Crystal ZnO Photoanodes by I. E. Paulauskas, G. E. Jellison, L. A. Boatner, G. M. Brown

“…Current measurements performed at the peak indicate that charging and discharging effects are apparently taking place at the semiconductor/electrolyte interface. This result is consistent with the significant reactive degradation that takes place on the ZnO single crystal photoanode surface and that ultimately leads to the reduction of the ZnO surface to Zn metal. …”
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Dynamic Modeling of Stress-Induced Defect Expansion in VCSELs by Yuqi Zhang, Xun Li, Jia Zhao

“…Many failures of semiconductor-based oxide confined vertical cavity surface emitting lasers (VCSELs) are closely related to the generation and expansion of defects in the device structure. …”
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Nanoscaled Electrocatalytic Optically Modulated ZnO Nanoparticles through Green Process of Punica granatum L. and Their Antibacterial Activities by Xolile Fuku, Abdoulaye Diallo, Malik Maaza

“…The optical band gap of ZnO NPs was calculated to be 3.48 eV which indicates that ZnO NPs can be used in metal oxide semiconductor-based devices. Further, the nanomaterials were also found to be good inhibitors of bacterial strains at both low and high concentrations of 5–10 mg mL−1.…”
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LDDP-Net: A Lightweight Neural Network with Dual Decoding Paths for Defect Segmentation of LED Chips by Jie Zhang, Ning Chen, Mengyuan Li, Yifan Zhang, Xinyu Suo, Rong Li, Jian Liu

“…Chip defect detection is a crucial aspect of the semiconductor production industry, given its significant impact on chip performance. …”
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Probing and manipulating the Mexican hat-shaped valence band of In2Se3 by James Felton, Jordan Harknett, Joe Page, Zhuo Yang, Nada Alghofaili, James N. O’Shea, Laurence Eaves, Yoshimitsu Kohama, Mark T. Greenaway, Amalia Patanè

“…Abstract Ferroelectrics based on van der Waals semiconductors represent an emergent class of materials for disruptive technologies ranging from neuromorphic computing to low-power electronics. …”
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The thermoelectric conversion efficiency problem: Insights from the electron gas thermodynamics close to a phase transition by I. Khomchenko, A. Ryzhov, F. Maculewicz, F. Kurth, R. Hühne, A. Golombek, M. Schleberger, C. Goupil, Ph. Lecoeur, A. Böhmer, G. Benenti, G. Schierning, H. Ouerdane

“…By relating the thermoelastic properties of the electronic working fluid to its transport properties (considering noninteracting electron systems), we show why the performance of conventional semiconductor materials is doomed to remain low. Analyzing the temperature dependence of the power factor theoretically in 2D systems and experimentally in a thin film, we find that in the fluctuation regimes of an electronic phase transition, the thermoelectric power factor can significantly increase owing to the increased compressibility of the electron gas. …”
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Revised direct bandgap and band parameters for AlP: hybrid-functional first-principles calculations vs experiment by Cónal Murphy, Eoin P. O’Reilly, Christopher A. Broderick

“…Despite its relevance to the development of quantum-confined heterostructures for classical and quantum applications, there is significant uncertainty regarding several key band parameters for the indirect-gap III–V semiconductor AlP. Critically, using hybrid-functional first-principles calculations, we find that the Γ6c–Γ8v bandgap is ∼1 eV larger than the widely assumed value of 3.63 eV. …”
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Boron-doped diamond MOSFETs operating at temperatures up to 400°C by Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide

“…The boron-doped diamond (B-diamond) metal-oxide–semiconductor field–effect transistors (MOSFETs) are fabricated and characterized at operating temperatures up to 400°C. …”
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Wavelength Tuning Free Transceiver Module in OLT Downstream Multicasting 4λ × 10 Gb/s TWDM-PON System by M. S. Salleh, A. S. M. Supa’at, S. M. Idrus, S. Yaakob, Z. M. Yusof

“…Meanwhile, the fixed wavelength optical line terminal (OLT) transmitter with wavelength tuning free features has been designed to integrate with the semiconductor optical amplifier (SOA) and passive arrayed waveguide grating (AWG). …”
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A four‐stage yield optimization technique for analog integrated circuits using optimal computing budget allocation and evolutionary algorithms by Abbas Yaseri, Mohammad Hossein Maghami, Mehdi Radmehr

“…The yield value obtained from the simulation results for two‐stage class‐AB Operational Transconductance Amplifer (OTA) in 180 nm Complementary Metal‐Oxide‐Semiconductor (CMOS) technology is 99.85%. The proposed method has less computational effort and high accuracy than the MC‐based approaches. …”
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The method of non-destructive measurement of power thyristor surge current by G. N. Anisimov, K. K. Kim, A. A. Tkachuk, A. Yu. Kuzmenko

“…The method is based on continuous control at each moment of time of the dynamic capacitance, the changing in the nature of the time dependence of which predicts the destruction of the semiconductor structure.…”
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Optimization of Seed-Receiving Mechanism in Belt-Driven Seed Guide Tube Based on High-Speed Videography Experiment by Chengcheng Ma, Zhihuan Zhao, Xiaomei Chen, Youyuan Tang, Ning Song, Yanfeng Xiao, Xu Yang

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The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET by Junghyeon Hwang, Giuk Kim, Hongrae Joh, Jinho Ahn, Sanghun Jeon

“…Metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FeFETs have significant potential for use in non-volatile memory applications. …”
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Theoretical study of the electronic and optical properties of a composite formed by the zeolite NaA and a magnetite cluster by Joel Antúnez-García, Roberto Núñez-González, Vitalii Petranovskii, H’Linh Hmok, Armando Reyes-Serrato, Fabian N. Murrieta-Rico, Mufei Xiao, Jonathan Zamora

“…It is noteworthy that the composite exhibits magnetic properties of a half-semiconductor and a strong optical response within the visible and ultraviolet regions of the spectrum.…”
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Strategic Review: The CZTS Thin-Film Using Tandem and Multi-Junction Solar Cell by Saif Adnan Muhamad, Methaq Hadi Lafta

“…The second generation of technology or thin-film technology, based on the semiconductor coating layer on glass, metal, or polymer layers, is 1μm - 5μm thick. …”
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A 0.002‐mm2 8‐bit 1‐MS/s low‐power time‐based DAC (T‐DAC) by Ali H. Hassan, Hassan Mostafa, Mohamed Refky, Khaled N. Salama, Ahmed M. Soliman

“…Complementary metal oxide semiconductor technology with a 1 V supply voltage, 1 MS/s conversion rate, and 0.9 μW power dissipation.…”
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The Effect of Annealing on the Structural and Optical Properties of Titanium Dioxide Films Deposited by Electron Beam Assisted PVD by Yaser M. Abdulraheem, Sahar Ghoraishi, Lidia Arockia-Thai, Suji K. Zachariah, Moustafa Ghannam

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Electrochemical Study of Anodized Titanium in Phosphoric Acid by M. Khadiri, M. Elyaagoubi, R. Idouhli, Y. Koumya, O. Zakir, J. Benzakour, A. Benyaich, A. Abouelfida, A. Outzourhit

“…Thus, the Mott Schottky model revealed that the formed film is an n-type semiconductor. The density of charge carriers is in good agreement with those found in the literature. …”
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