Showing 421 - 440 results of 685 for search '"semiconductor"', query time: 0.05s Refine Results
  1. 421

    Evaluating risk factors in automotive supply chains: A hybrid fuzzy AHP-TOPSIS approach with extended PESTLE framework by Ishansh Gupta, Seyed Taha Raeisi, Sergio Correa, Hendro Wicaksono

    Published 2025-03-01
    “…The study identifies 34 ERFs, including semiconductor shortages, pandemics, and information infrastructure disruptions, and evaluates their impact on KPIs such as missing parts, backlogs, special transports, and wrong deliveries. …”
    Get full text
    Article
  2. 422

    Enhancing Performance of SnO2-Based Dye-Sensitized Solar Cells Using ZnO Passivation Layer by W. M. N. M. B. Wanninayake, K. Premaratne, R. M. G. R. Rajapakse

    Published 2016-01-01
    “…Even though SnO2 shows high election mobility when compared to the semiconductor material commonly used in DSCs, the cell performance of SnO2-based DSCs is considerably low due to high electron recombination. …”
    Get full text
    Article
  3. 423

    RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS by Van Chinh Ngo, Nguyen Huu Hanh Pham, Thi Kim Quyen Nguyen, Thi Kim Loan Phan, Thanh Tra Vu

    Published 2024-03-01
    “…This is a favorable condition for controlling the conductive state of materials in future applications in the semiconductor and thermoelectric industries. …”
    Get full text
    Article
  4. 424

    All-silicon non-volatile optical memory based on photon avalanche-induced trapping by Yuan Yuan, Yiwei Peng, Stanley Cheung, Wayne V. Sorin, Sean Hooten, Zhihong Huang, Di Liang, Jiuyi Zhang, Marco Fiorentino, Raymond G. Beausoleil

    Published 2025-01-01
    “…Here, we demonstrate an non-volatile optical memory exclusively using the most common semiconductor material, silicon. By manipulating the photon avalanche effect, we introduce a trapping effect at the silicon-silicon oxide interface, which in turn demonstrates a non-volatile reprogrammable optical memory cell with a record-high 4-bit encoding, robust retention and endurance. …”
    Get full text
    Article
  5. 425

    Synthesis, Characterization, and Low Temperature Sintering of Nanostructured BaWO4 for Optical and LTCC Applications by S. Vidya, Sam Solomon, J. K. Thomas

    Published 2013-01-01
    “…The basic optical properties and optical constants of the nano BaWO4 are studied using UV-visible absorption spectroscopy which showed that the material is a wide band gap semiconductor with band gap of 4.1 eV. The sample shows poor transmittance in ultraviolet region while maximum in visible-near infrared regions. …”
    Get full text
    Article
  6. 426

    Controlled Assembly of Nanorod TiO2 Crystals via a Sintering Process: Photoanode Properties in Dye-Sensitized Solar Cells by Saeid Vafaei, Kazuhiro Manseki, Soki Horita, Masaki Matsui, Takashi Sugiura

    Published 2017-01-01
    “…The purpose of this research is (i) to control crystallization of the mixture of two kinds of TiO2 semiconductor nanocrystals, that is, 3D BR-TiO2 and spherical anatase TiO2 (SA-TiO2) on FTO substrate via sintering process and (ii) to establish a new method to create photoanodes in dye-sensitized solar cells (DSSCs). …”
    Get full text
    Article
  7. 427

    Near-Infrared All-Silicon Photodetectors by M. Casalino, G. Coppola, M. Iodice, I. Rendina, L. Sirleto

    Published 2012-01-01
    “…The technological steps utilized to fabricate the devices allow an efficiently monolithic integration with complementary metal-oxide semiconductor (CMOS) compatible structures.…”
    Get full text
    Article
  8. 428

    Nantenna for Standard 1550 nm Optical Communication Systems by Waleed Tariq Sethi, Hamsakutty Vettikalladi, Habib Fathallah, Mohamed Himdi

    Published 2016-01-01
    “…The detection of light frequency using nanooptical antennas may possibly become a good competitor to the semiconductor based photodetector because of the simplicity of integration, cost, and inherent capability to detect the phase and amplitude instead of power only. …”
    Get full text
    Article
  9. 429

    Dual subwavelength-grating topology for building polarization beam splitters by Chia-Chih Huang

    Published 2025-01-01
    “…This approach, utilizing biaxial anisotropic metamaterials, offers a flexible method for integrating PBSs into photonic integrated circuits using standard semiconductor fabrication processes.…”
    Get full text
    Article
  10. 430

    Modelling of quantum yields in photocatalytic membrane reactors immobilising titanium dioxide by Ignazio Renato Bellobono, Giulia de Martini, Paola Maria Tozzi, Carmen Canevali, Franca Morazzoni, Roberto Scotti, Riccardo Bianchi

    Published 2006-01-01
    “…By having thus established that quantum yields of photomineralisation Φ∞ are independent of radiation wavelength, within the absorption range of semiconductor, but depend on radiant power, such a dependency was experimentally investigated. …”
    Get full text
    Article
  11. 431

    Electronic Structure and Optical Properties of GaAs Doped with Rare-Earth Elements (Sc, Y, La, Ce, and Pr) by Yongrong Deng, Chunhong Zhang, Xinmao Qin, Wanjun Yan

    Published 2025-01-01
    “…Band structure calculations indicated that the lowest conduction band and highest valence band were evident at the G-point, demonstrating that rare-earth-element doping did not alter the material type of GaAs, which remained a direct-bandgap semiconductor. The bandgap of Sc-doped GaAs increased, whereas those of Y-, La-, Ce-, and Pr-doped GaAs decreased. …”
    Get full text
    Article
  12. 432

    Broadband Polarization-Independent Edge Couplers With High Efficiency Based on SiN-Si Dual-Stage Structure by Yang Jiang, Zhewei Zhang, Peng Liu

    Published 2024-01-01
    “…Silicon nitride (SiN) plays a critical role in silicon photonics because of its lower refractive index, low waveguide loss, broad operating bandwidth and compatibility with complementary metal oxide semiconductor (CMOS) fabrication process. Here, we propose a polarization-independent sub-wavelength grating (SWG) edge coupler with high efficiency based on SiN-Si dual-stage structure with a length of only 315.8 μm. …”
    Get full text
    Article
  13. 433

    An instruction dataset for extracting quantum cascade laser properties from scientific textDataverse by Deperias Kerre, Anne Laurent, Kenneth Maussang, Dickson Owuor

    Published 2025-02-01
    “…Quantum Cascade Lasers (QCL) are promising semiconductor lasers, compact and powerful, but of complex design. …”
    Get full text
    Article
  14. 434

    MEASUREMENT OF CO AND NO2 GAS CONCENTRATION'S BY MULTISENSOR MICROSYSTEM IN THE MODE OF PULSE HEATING by O. G. Reutskaya, Y. M. Pleskachevsky

    Published 2017-06-01
    “…The most promising for mass use in gas analysis equipment are semiconductor gas sensors due to their high reliability, easy operation and relatively low cost. …”
    Get full text
    Article
  15. 435

    UV Filtering of Dye-Sensitized Solar Cells: The Effects of Varying the UV Cut-Off upon Cell Performance and Incident Photon-to-Electron Conversion Efficiency by Matthew Carnie, Trystan Watson, David Worsley

    Published 2012-01-01
    “…From the results presented it can be estimated that filtering at a level intended to prevent direct band gap excitation of the TiO2 semiconductor should cause a relative drop in cell efficiency of no more than 10% in forward illuminated devices and no more than 2% in reverse illuminated devices.…”
    Get full text
    Article
  16. 436

    FPGACam: A FPGA based efficient camera interfacing architecture for real time video processing by Sayantam Sarkar, Satish S. Bhairannawar, Raja K.B.

    Published 2021-11-01
    “…In this paper, we propose an efficient FPGA‐based low cost Complementary Metal Oxide Semiconductor (CMOS) camera interfacing architecture for live video streaming and processing applications. …”
    Get full text
    Article
  17. 437

    Hybrid Hamiltonian Simulation Approach for the Analysis of Quantum Error Correction Protocol Robustness by Benjamin Gys, Lander Burgelman, Kristiaan De Greve, Georges Gielen, Francky Catthoor

    Published 2024-01-01
    “…The development of future full-scale quantum computers (QCs) not only comprises the design of good quality qubits, but also entails the design of classical complementary metal–oxide semiconductor (CMOS) control circuitry and optimized operation protocols. …”
    Get full text
    Article
  18. 438

    Preparation of a Counter Electrode with P-Type NiO and Its Applications in Dye-Sensitized Solar Cell by Chuen-Shii Chou, Chin-Min Hsiung, Chun-Po Wang, Ru-Yuan Yang, Ming-Geng Guo

    Published 2010-01-01
    “…This study investigates the applicability of a counter electrode with a P-type semiconductor oxide (such as NiO) on a dye-sensitized solar cell (DSSC). …”
    Get full text
    Article
  19. 439
  20. 440

    Investigation of an Electrochemical Method for Separation of Copper, Indium, and Gallium from Pretreated CIGS Solar Cell Waste Materials by Anna M. K. Gustafsson, Fredrik Björefors, Britt-Marie Steenari, Christian Ekberg

    Published 2015-01-01
    “…Recycling of the semiconductor material copper indium gallium diselenide (CIGS) is important to ensure a future supply of indium and gallium, which are relatively rare and therefore expensive elements. …”
    Get full text
    Article