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Copper halide-based semiconductor materials. Adsorption properties
Published 2019-06-01Subjects: Get full text
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22
A Mathematical Formulation for Diamagnetism in Tetrahedrally Bonded Semiconductors
Published 1997-01-01“…An expression for the magnetic susceptibility tensor corresponding to diamagnetic contribution in tetrahedrally bonded semiconductors is derived; this formulation refers to the crystalline state. …”
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23
Reliability Express Control of the Gate Dielectric of Semiconductor Devices
Published 2018-12-01“…The key element determining stability of the semiconductor devices is a gate dielectric. As its thickness reduces in the process of scaling the combined volume of factors determining its electrophysical properties increases. …”
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24
A Brief Note on Coherent Feedback in Semiconductor Lasers
Published 1994-01-01Get full text
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25
WELCOMING THE SEMICONDUCTOR INDUSTRY IN GHANA: CHALLENGES AND RECOMMENDATIONS – A CASE STUDY
Published 2021-01-01Subjects: “…semiconductor industry, semiconductor, electronics, Ghana…”
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Narrow-Gap Semiconductors and Low-Dimensional Structures for Optoelectronic Applications
Published 2014-01-01Get full text
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27
A Molecular-Orbital Model for Amorphous Group IV Semiconductors
Published 1997-01-01“…This model is valid for amorphous group IV semiconductors and represents a substantial improvement of the state of the art.…”
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28
Influence of Pressure on the Temperature Dependence of Quantum Oscillation Phenomena in Semiconductors
Published 2017-01-01“…It is shown that the effect of pressure on the band gap is manifested to oscillations and ShdH and dHvA effects in semiconductors.…”
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Roles of doping in enhancing the performance of graphene/graphene-like semiconductors
Published 2025-01-01“…Although there are many reviews on the doped graphene, there is a rare one to discuss the role of doping in enhancing the performance of graphene-based semiconductors. This paper reviews various doping types and their impacts on graphene, emphasizing the effects of boron (B) doping, nitrogen (N) doping, oxygen-group doping, other non-metallic atom or atomic pair doping, and metallic doping. …”
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30
Shubnikov–de Haas Oscillations in Semiconductors at the Microwave-Radiation Absorption
Published 2019-01-01“…Mathematical models for the Shubnikov-de Haas oscillations in semiconductors are obtained at the microwave-radiation absorption and its temperature dependence. …”
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31
Semiempirical Efficiency Calibration in Semiconductor HPGe Gamma-Ray Spectroscopy
Published 2018-01-01Get full text
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32
The optimization of semiconductor light, generating white light, heating regime
Published 2023-12-01“… In this work the mathematical model of semiconductor light was employed. There were offered the distribution cases for monochromatic lighting sources. …”
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33
Fabrication and Characterization of Copper System Compound Semiconductor Solar Cells
Published 2010-01-01“…Copper system compound semiconductor solar cells were produced by a spin-coating method, and their cell performance and structures were investigated. …”
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Semiconductor-Based Photocatalytic, Photoelectrochemical, and Photovoltaic Solar-Energy Conversion
Published 2014-01-01Get full text
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35
Thick Film Temperature Compensating Circuit for Semiconductor Strain Gauges
Published 1981-01-01Get full text
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36
A novel model of photoacoustic and thermalelectronic waves in semiconductor material
Published 2025-01-01“…Considering the optical, elastic, and thermoelastic properties of semiconductor material, photoacoustic signals are predicted by solving a thermal diffusion issue and then a thermoelastic problem in sequence. …”
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Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers
Published 2014-01-01Get full text
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38
Oxide Nanomaterials Based on SnO2 for Semiconductor Hydrogen Sensors
Published 2019-01-01“…The obtained SnO2 can be used as initial material for creation of gas-sensitive layers of adsorption semiconductor sensors. Addition of palladium into the initial nanomaterial allows to improve response to hydrogen of such sensors in comparison with sensors based on undoped SnO2 and provides fast response and recovery time, a wide measuring range of hydrogen content in air ambient, and good repeatability of the sensor signal. …”
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Quantum control in size selected semiconductor quantum dot thin films
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Ultrawide bandgap semiconductor h-BN for direct detection of fast neutrons
Published 2025-01-01“…III-nitride wide bandgap semiconductors have contributed on the grandest scale to many technological advances in lighting, displays, and power electronics. …”
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