Synergetic Phase Modulation and N‐Doping of MoS2 for Highly Sensitive Flexible NO2 Sensors by Jiyun Kim, Mengyao Li, Chun‐Ho Lin, Long Hu, Tao Wan, Ayad Saeed, Peiyuan Guan, Zijian Feng, Tushar Kumeria, Jianbo Tang, Dawei Su, Tom Wu, Dewei Chu

“…It is found that 2H semiconductor phase with nitrogen doping (N‐doping) in flexible gas sensors constructed with Ag electrodes exhibits the highest sensitivity of ≈2500% toward 10 ppm of NO2. …”
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Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1−x)O2 during suboxide molecular beam epitaxy by Wenshan Chen, Kingsley Egbo, Joe Kler, Andreas Falkenstein, Jonas Lähnemann, Oliver Bierwagen

“…Rutile GeO2 is a promising ultra-wide bandgap semiconductor for future power electronic devices whose alloy with the wide bandgap semiconductor rutile-SnO2 enables bandgap engineering and the formation of heterostructure devices. …”
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Enhanced Temperature Control Method Using ANFIS with FPGA by Chiung-Wei Huang, Shing-Tai Pan, Jun-Tin Zhou, Cheng-Yuan Chang

“…Temperature control in etching process is important for semiconductor manufacturing technology. However, pressure variations in vacuum chamber results in a change in temperature, worsening the accuracy of the temperature of the wafer and the speed and quality of the etching process. …”
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Global Existence and Large Time Behavior of Solutions to the Bipolar Nonisentropic Euler-Poisson Equations by Min Chen, Yiyou Wang, Yeping Li

“…We study the one-dimensional bipolar nonisentropic Euler-Poisson equations which can model various physical phenomena, such as the propagation of electron and hole in submicron semiconductor devices, the propagation of positive ion and negative ion in plasmas, and the biological transport of ions for channel proteins. …”
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Gatemonium: A Voltage-Tunable Fluxonium by William M. Strickland, Bassel Heiba Elfeky, Lukas Baker, Andrea Maiani, Jaewoo Lee, Ido Levy, Jacob Issokson, Andrei Vrajitoarea, Javad Shabani

“…We present a new style of fluxonium qubit, gatemonium, based on an all-superconductor-semiconductor hybrid platform. The linear inductance is achieved using 600 planar Al-InAs Josephson junctions (JJs) in series. …”
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Interfacial Transport Study of Ultra-Thin InN-Enhanced Quantum Dot Solar Cells by Shuaijie Wang, Dong Zhang, Zhenhe Ju

“…Solar cells are a means of converting solar energy into electrical energy using the photovoltaic effect of semiconductor materials. This photoelectric absorber layer has been developed for more than 70 years. …”
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Performance of clock sources and their influence on time synchronization in wireless sensor networks by Francisco Tirado-Andrés, Alvaro Araujo

“…Complementary metal-oxide-semiconductor oscillators have a low accuracy, bigger than 500 ppm, and a high dependency with temperature. …”
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Hybrid Josephson Rhombus: A Superconducting Element with Tailored Current-Phase Relation by L. Banszerus, C. W. Andersson, W. Marshall, T. Lindemann, M. J. Manfra, C. M. Marcus, S. Vaitiekėnas

“…Here, we introduce the hybrid Josephson rhombus, a highly tunable superconducting circuit containing four semiconductor-superconductor hybrid Josephson junctions embedded in a loop. …”
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Nanoscale nonlocal thermal transport and thermal field emission in high-current resonant tunnel structures by Michael V. Davidovich, Igor S. Nefedov, Olga E. Glukhova, J. Miguel Rubi

“…The model applies to vacuum and semiconductor resonant tunnel diode and triode structures with two and three electrodes and to the general case of two-way tunneling with electrode heating. …”
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THE TECHNIQUES SEPARATING THREE OVERLAP PEAKS IN GAMMA SPECTRUM by Trịnh Ngọc Pháp, Mai Xuân Trung

“…Based on separating the two overlap peaks method has been implemented in our previous article, the separating three overlap peaks was successfully implemented in this paper, in which the calculations were tested with gamma-ray spectra by using a Semiconductor detector and a Scintillator detector.…”
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Computational Study of Metal-Free Magnetism and Spin-Dependent Seebeck Effect in Silicene Nanoribbons with Zigzag and Klein Edges by Xingyi Tan, Gang Xu, Youchang Jiang, Dahua Ren

“…With the increase of the width parameter N from 4 to 19, the N-ZKSiNRs pass from the indirect-gap bipolar magnetic semiconducting state (BMS) to the bipolar spin-gapless semiconductor (BSGS) and eventually to half-metallicity (HM). …”
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Gelatin Used as a Transductor in an Optical Hygrometer Based on a Fabry-Perot Interferometer by Sergio Calixto

“…The measurement of humidity shows its importance in applications such as food processing, meteorological, semiconductor, building and construction, medical, and automotive to mention but a few. …”
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Diverse Role of Silicon Carbide in the Domain of Nanomaterials by T. Sahu, B. Ghosh, S. K. Pradhan, T. Ganguly

“…Despite being an indirect band gap semiconductor, SiC is used in several high-performance electronic and optical devices. …”
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Degradation of VDMOSFET by Heavy Ion Irradiations by C. Salame, F. Pelanchon, P. Mialhe

“…This article focuses on the effect of the heavy ions irradiations on the electrical characteristics of VDMOSFET (Vertical Diffusion Metal Oxide Semiconductor Field Effect Transistor) devices. A summary of the total dose effects and the single event effects is covered to evaluate the experimental observations. …”
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Optical detection of bond-dependent and frustrated spin in the two-dimensional cobalt-based honeycomb antiferromagnet Cu3Co2SbO6 by Baekjune Kang, Uksam Choi, Taek Sun Jung, Seunghyeon Noh, Gye-Hyeon Kim, Uihyeon Seo, Miju Park, Jin-Hyun Choi, Min Jae Kim, GwangCheol Ji, Sehwan Song, Hyesung Jo, Seokjo Hong, Nguyen Xuan Duong, Subhasis Samanta, Heung-Sik Kim, Tae Heon Kim, Yongsoo Yang, Sungkyun Park, Jong Mok Ok, Jung-Woo Yoo, Jae Hoon Kim, Changhee Sohn

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Stability of GaN HEMT Device Under Static and Dynamic Gate Stress by Linfei Gao, Ze Zhong, Qiyan Zhang, Xiaohua Li, Xinbo Xiong, Shaojun Chen, Longkou Chen, Huaibao Yan, Anle Zhang, Jiajun Han, Wenrong Zhuang, Feng Qiu, Hsien-Chin Chiu, Shuangwu Huang, Xinke Liu

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Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral by Hugues Murray, Patrick Martin, Serge Bardy

“…We propose a simple model, derived from Pao-Sah theory, valid in all modes from weak to strong inversion, to calculate the drain current in Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The Pao-Sah double integral is decomposed into single integrals with limits of integration calculated from Taylor polynomials of inverse functions. …”
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A Switched-Capacitor-Based 7-Level Self-Balancing High-Gain Inverter Employing a Single DC Source by Yatindra Gopal, Kaibalya Prasad Panda, Akanksha Kumari, Julio C. Rosas-Caro

“…The proposed 7-level SC inverter requires less number of switches, driver diodes, and capacitors and a lower number of semiconductor switches than most recently developed topologies. …”
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Fluorophore signal detection and imaging enhancement in high refractive index nanowire biosensors by Nicklas Anttu

“…Semiconductor nanowires are an efficient platform for fluorescence-based biosensors. …”
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Synthetic Strategies and Applications of GaN Nanowires by Guoquan Suo, Shuai Jiang, Juntao Zhang, Jianye Li, Meng He

“…GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. …”
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