Fabrication of metal organic framework/Polyoxometalate-TiO2 based DSCCs with enhanced electron lifetime and reduced recombination of charge carriers sensitized with cabbage/spinach... by William Moloto, Pontsho Mbule, Edward Nxumalo, Bulelwa Ntsendwana

Subjects: “…Nitrogen doped carbon quantum dots…”
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Investigations of Optical Coulomb Blockade Oscillations in Plasmonic Nanoparticle Dimers by Lamessa Gudata, Jule Leta Tesfaye, Abela Saka, R. Shanmugam, L. Priyanka Dwarampudi, Nagaraj Nagaprasad, B. Stalin, Ramaswamy Krishnaraj

“…One way to think about single-electron tunnelling through some kind of quantum dot is to think about Coulomb blockage oscillations in conductance. …”
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The Reduced Recombination and the Enhanced Lifetime of Excited Electron in QDSSCs Based on Different ZnS and SiO2 Passivation by Ha Thanh Tung, Nguyen Thu Thao, Lam Quang Vinh

“…In this study, we focus on the enhanced absorption and reduced recombination of quantum dot solar cells based on photoanodes which were coated by different ZnS or SiO2 passivations using the successive ionic layer absorption and reaction methods. …”
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Simulating Molecular Interactions of Carbon Nanoparticles with a Double-Stranded DNA Fragment by Zhuang Wang, Hao Fang, Se Wang, Fan Zhang, Degao Wang

“…Six types of CNPs including fullerenes (C60 and C70), (8,0) single-walled carbon nanotube (SWNT), (8,0) double-walled carbon nanotube (DWNT), graphene quantum dot (GQD), and graphene oxide quantum dot (GOQD) were studied. …”
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A PASSIVELY MODE-LOCKED CR4+:FORSTERITE LASER WITH ELEСTRONICALLY CONTROLLED OUTPUT CHARACTERISTICS by S. A. Zolotovskaya, K. G. Wilcox, A. Abdolvand, D. A. Livshits, E. U. Rafailov

“…Stable passive mode-locking of a Cr4+:forsterite laser using a voltage controlled p-n junction quantum dot saturable absorber was achieved. Output shortening from 17,4 to 6,4 ps near-transform limited pulses was obtained by applying reverse bias.…”
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Design and Implementation of Nanotechnology QCA Geometric Greedy Router by Lamjed Touil, Ismail Gassoumi, Abdellatif Mtibaa

“…This paper presents an optimized geometric greedy router (GGR) based on quantum dot cellular automata (QCA) technology. The proposed structure of GGR is based on a spanning tree of the network. …”
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Correlation Between Quantum Confinement Effect and Characteristics of Thin-Film Transistors in Solution-Processed Oxide-Based Thin-Films by Jinyeong Lee, Jaewook Jeong

“…The PL emission peaks were closely related to the surface morphology of the thin films, which were clearly observed when isolated, nano-sized particles of quantum dot structure were present, leading to quantum confinement effect in the ZnO and GaZnO thin films. …”
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Imaging Early Steps of Sindbis Virus Infection by Total Internal Reflection Fluorescence Microscopy by Youling Gu, Yuanzheng Yang, Yuechueng Liu

“…Biotinylated viral particles were labeled with quantum dots, which retained viral viability and infectivity. …”
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Gate modulation of the hole singlet-triplet qubit frequency in germanium by John Rooney, Zhentao Luo, Lucas E. A. Stehouwer, Giordano Scappucci, Menno Veldhorst, Hong-Wen Jiang

“…Abstract Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent g-tensors. …”
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An Architecture of 2-Dimensional 4-Dot 2-Electron QCA Full Adder and Subtractor with Energy Dissipation Study by Md. Abdullah-Al-Shafi, Ali Newaz Bahar

“…Quantum-dot cellular automata (QCA) is the beginning of novel technology and is capable of an appropriate substitute for orthodox semiconductor transistor technology in the nanoscale extent. …”
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Single Charge Current in a Normal Mesoscopic Region Attached to Superconductor Leads via a Coupled Poisson Nonequilibrium Green Function Formalism by David Verrilli, F. P. Marin, Rafael Rangel

“…We study the I-V characteristic of mesoscopic systems or quantum dot (QD) attached to a pair of superconducting leads. …”
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The Effects of Interdot Spacing and Dot Size on the Performance of InGaAs/GaAs QDIBSC by Sayeda Anika Amin, Md. Tanvir Hasan, Muhammad Shaffatul Islam

“…In0.53Ga0.47As/GaAs-based quantum dot intermediate band solar cells (QDIBSCs) have been designed and optimized for the next generation photovoltaic technology. …”
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Reliable SRAM using NAND‐NOR Gate in beyond‐CMOS QCA technology by Marshal Raj, Lakshminarayanan Gopalakrishnan, Seok‐Bum Ko

“…Abstract The rise in complementary metal‐oxide semiconductor (CMOS) limitations has urged the industry to shift its focus towards beyond‐CMOS technologies to stay in race with Moore’s law. Quantum‐dot cellular automata (QCA) is considered to be a prominent paradigm among the emerging beyond‐CMOS technologies. …”
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Distinguishing Majorana bound states from Andreev bound states through differential conductance and current noise spectrum by Huajin Zhao, Junrong Wang, Hong Mao, Jinshuang Jin

“…We investigate the quantum transport through a quantum dot coupled with a superconducting (SC) nanowire. …”
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A fault tolerant CSA in QCA technology for IoT devices by Saeid Seyedi, Hatam Abdoli

“…Abstract According to recent research, with the ever-increasing use of Internet of Things (IoT) devices, there has arisen an ever-growing need for high-performance yet low-power circuits that can efficiently process information. Quantum-dot Cellular Automata (QCA) has emerged as a promising alternative to conventional complementary metal-oxide-semiconductor (CMOS) technology due to its great potential in digital design at nanoscale levels on account of very low power consumption and very high processing speed. …”
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Influence of variation in indium concentration and temperature on the threshold current density in InxGa1-xAs/GaAs QD laser diodes by Zainab M. Alharbi, M.S. Al-Ghamdi

“…The influence of variations in indium concentration and temperature on threshold current density (Jth) in InxGa1-xAs/GaAs (x = 0, 0.8 and 0.16) quantum dot (QD) laser diodes – synthesized via molecular beam epitaxy (MBE) with three distinct indium concentrations on GaAs (001) substrates – was meticulously examined. …”
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Synthesis and optical properties of LaSrGaO4:RE3+ (RE = Sm, Eu, Ho) single crystals via optical float zone method by Hasan Yilmaz, Masahiko Isobe, Oliver Clemens, Markus Suta, Pascal Puphal

“…The advancement of synthesis of materials with luminescence properties of lanthanoid ions in various single crystalline host compounds with low phonon energies has facilitated the optimization of numerous materials to meet the specific optical properties required for diverse applications such as new energy resource exploration, light-emitting diodes (LEDs), quantum dot displays, laser technology, sensors, telecommunications, medical diagnostics and more. …”
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Neuron-inspired CsPbBr3/PDMS nanospheres for multi-dimensional sensing and interactive displays by Junhu Cai, Xiang Zhang, Yu Chen, Wenzong Lai, Yun Ye, Sheng Xu, Qun Yan, Tailiang Guo, Jiajun Luo, Enguo Chen

“…However, achieving multi-dimensional sensing capabilities with the same perovskite quantum dot (PQD) material is still in its infancy, with some considering it currently challenging and even unattainable. …”
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Pyrolysis conversion of crown-ether-based covalent networks to kagome metal-organic frameworks on Au(111) and Ag(111) by Yifan Liang, Jianing Wang, Ruoting Yin, Zhengya Wang, Xiaoqing Wang, Jie Meng, Shijing Tan, Chuanxu Ma, Qunxiang Li, Bing Wang

“…Electronic characterizations reveal the presence of both regular and diatomic kagome lattices, together with distinct quantum-dot states emerging in the pore regions. Additionally, we investigate the selective encapsulation of single guest picenes within the MOF structure, emphasizing the potential of triphenylene-based frameworks for advanced applications in sensing and molecular filtering. …”
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Morphology and Optical Investigations of InAs-QD/GaAs Heterostructures Obtained by Ion-Beam Sputtering by S. N. Chebotarev, A. S. Pashchenko, V. A. Irkha, M. L. Lunina

“…A new ion-beam sputtering technique for obtaining self-assembled InAs quantum dots on GaAs (001) substrates is proposed. The current paper demonstrates that a temperature increase in a range from 450 to 550°C at ion current of 120 μA and energy of 150 eV leads to an expansion of average sizes of InAs hut-quantum dots. …”
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