Showing 61 - 80 results of 80 for search '"optoelectronic devices"', query time: 0.07s Refine Results
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    Investigating the encapsulation of lead bromide perovskite with poly(3-bromothiophene) for improved aqua stability and enhanced fluorescence memory by Debasis Brahma, Jit Satra, Sayan Basak, Subhadeep Chakraborty, Rahul Chatterjee, Suman Acharya, Debdipta Basu, Abhijit Bandyopadhyay

    Published 2025-02-01
    “…These findings provide a practical, non-interacting encapsulation strategy that enhances both the environmental and thermal stability of FAPbBr₃ while preserving its emission characteristics, offering potential to support the further development of perovskite-based optoelectronic devices for practical applications.…”
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    Article
  4. 64

    Nanoscale ultrafast dynamics in Bi2Te3 thin film by terahertz scanning near-field nanoscopy by Ziyu Huang, Jing Li, Peiyan Li, Lin Du, Mingcong Dai, Jiahua Cai, Zejun Ren, Tianxiao Nie, Xiaojun Wu

    Published 2025-02-01
    “…Summary: Ultrafast laser interactions with topological insulators (TIs) have garnered tremendous interest for understanding light-matter interactions and developing optoelectronic devices across visible to terahertz (THz) regions owning to their high carrier mobility and sensitivity to electric fields. …”
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    Article
  5. 65

    Intrinsically anisotropic 1D NbTe4 for self-powered polarization-sensitive photodetection by Huahu Luo, Fafa Wu, Chaowei He, Wanfu Shen, Chunguang Hu, Weina Zhao, Peng Yu, Guowei Yang

    Published 2024-11-01
    “…Abstract Polarization-sensitive photodetection enhances scene information capture, crucial for modern optoelectronic devices. One-dimensional (1D) materials with intrinsic anisotropy, capable of directly sensing polarized light, are promising for such photodetectors. …”
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    Article
  6. 66

    Optimizing the Morphology and Optical Properties of MoS<sub>2</sub> Using Different Substrate Placement: Numerical Simulation and Experimental Verification by Feng Liao, Yuhan Zeng, Qingqing Xie, Yupeng Yang, Shuangyi Linghu, Li Liang, Zewen Zuo

    Published 2025-01-01
    “…The prerequisite for rapid and steady development of TMDC-based optoelectronic devices is high efficiency in materials preparation, which relies on a mature synthesis technique and optimized production conditions. …”
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    Article
  7. 67

    Giant Photoluminescence Enhancement of Ga‐Doped ZnO Microwires by X‐Ray Irradiation by Siyuan He, Shuiyan Cao, Ying Liu, Wenfa Chen, Pin Lyu, Weidian Li, Jincheng Bao, Wenhui Sun, Caixia Kan, Mingming Jiang, Yanpeng Liu

    Published 2025-01-01
    “…The enhanced photoluminescence and electroluminescence as well as long‐term stability enable us to imagine the super‐rapid applications of ZnO microwires in modern optoelectronic devices.…”
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    Article
  8. 68

    Liquid-based encapsulation for implantable bioelectronics across broad pH environments by He Sun, Xiaoting Xue, Gabriella L. Robilotto, Xincheng Zhang, ChangHee Son, Xingchi Chen, Yue Cao, Kewang Nan, Yiyuan Yang, Gavin Fennell, Jaewook Jung, Yang Song, Huijie Li, Shao-Hao Lu, Yizhou Liu, Yi Li, Weiyi Zhang, Jie He, Xueju Wang, Yan Li, Aaron D. Mickle, Yi Zhang

    Published 2025-01-01
    “…When applied to implantable wireless optoelectronic devices, our encapsulation method demonstrates outstanding water resistance in vitro, ranging from extremely acidic environments (pH = 1.5 and 4.5) to alkaline conditions (pH = 9). …”
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    Article
  9. 69

    Improving the charge transport of perovskite nanocrystal light-emitting-diodes through Benzylammonium ligand exchange by Minsik Gong, Dong Gyu Lee, Gwang Yong Shin, Yun Seop Shin, Donghwan Yun, Yunhye Jeong, Sang Wook Park, Chan Beom Park, Yung Jin Yoon, Sung Yong Bae, Yun-Hi Kim, Jin Young Kim, Tae Kyung Lee, Gi-Hwan Kim

    Published 2025-03-01
    “…This study highlights the potential of ligand exchange to customize LHP NCs’ properties, paving the way for the development of high-efficiency blue LHP LEDs, and other advanced optoelectronic devices. As results, the LHP LEDs using these ligand-exchanged LHP NCs, achieving a notable increase maximum current efficiency (CEmax,) to 5.88 %, 19.5 cd A-1 at BA bromide, and 5.50 %, 16.6 cd A-1 at BA chloride, compared to devices using pristine LHP NCs, which achieved external quantum efficiency (EQE) 2.4 %, CEmax 7.8 cd A-1.…”
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    Formation, Energetics, and Electronic Properties of Graphene Monolayer and Bilayer Doped with Heteroatoms by Yoshitaka Fujimoto

    Published 2015-01-01
    “…Doping with heteroatoms is one of the most effective methods to tailor the electronic properties of carbon nanomaterials such as graphene and carbon nanotubes, and such nanomaterials doped with heteroatom dopants might therefore provide not only new physical and chemical properties but also novel nanoelectronics/optoelectronics device applications. The boron and nitrogen are neighboring elements to carbon in the periodic table, and they are considered to be good dopants for carbon nanomaterials. …”
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    Article
  12. 72

    Magnetoelectric effect in van der Waals magnets by Kai-Xuan Zhang, Giung Park, Youjin Lee, Beom Hyun Kim, Je-Geun Park

    Published 2025-01-01
    “…We also highlight the promising route of utilizing quantum magnetic hetero- or homo-structures to engineer the ME effect and corresponding spintronic and optoelectronic device applications. Due to the intrinsic two-dimensionality, vdW magnets with those ME effects are expected to form a new, exciting research direction.…”
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    Article
  13. 73

    Molecular beam epitaxy, photocatalytic solar water splitting, and carrier dynamics of InGaN micro-network deep-nano structures by Ishtiaque Ahmed Navid, Yifan Shen, Peng Zhou, Jonathan Schwartz, Yin Min Goh, Tao Ma, Robert Hovden, Theodore Norris, Zetian Mi

    Published 2025-01-01
    “…GaN-based nanostructures are increasingly being used for a broad range of electronic as well as optoelectronic device applications, and more recently artificial photosynthesis and solar fuel generation. …”
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    Article
  14. 74

    Characteristics of Nanocrystallite-CdS Produced by Low-Cost Electrochemical Technique for Thin Film Photovoltaic Application: The Influence of Deposition Voltage by Obi Kingsley Echendu, Francis Birhanu Dejene, Imyhamy Mudiy Dharmadasa, Francis Chukwuemeka Eze

    Published 2017-01-01
    “…The two-electrode system used provides a relatively simple and cost-effective approach for large-scale deposition of semiconductors for solar cell and other optoelectronic device application. Five CdS thin films were deposited for 45 minutes each at different cathodic deposition voltages in order to study their properties. …”
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    Article
  15. 75

    Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy by K. Hiruma, K. Tomioka, P. Mohan, L. Yang, J. Noborisaka, B. Hua, A. Hayashida, S. Fujisawa, S. Hara, J. Motohisa, T. Fukui

    Published 2012-01-01
    “…The results have indicated that the core-shell structure is indispensable for surface passivation and practical use of nanowire optoelectronics devices.…”
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    Article
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    Recent Advances in Graphene-Assisted Nonlinear Optical Signal Processing by Jian Wang, Xiao Hu

    Published 2016-01-01
    “…So far, the main focus has been on graphene based photonics and optoelectronics devices. Due to the linear band structure allowing interband optical transitions at all photon energies, graphene has remarkably large third-order optical susceptibility χ(3), which is only weakly dependent on the wavelength in the near-infrared frequency range. …”
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    Article
  18. 78

    Crystal structure modulating performances for 213-nm GeO2 solar-blind photodetectors via DC reactive magnetron sputtering method by Chengming Wei, Jiabao Liu, Xinru Lan, Cheng Yang, Shuiping Huang, Dongdong Meng, Zhengwei Chen, Hongguang Duan, Xu Wang

    Published 2025-02-01
    “…Our findings suggest that the GeO2 thin film is a candidate material for optoelectronic device applications and will provide a facile and innovative strategy to develop the solar-blind photodetector.…”
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  19. 79

    Epitaxial growth of transition metal nitrides by reactive sputtering by Florian Hörich, Christopher Lüttich, Jona Grümbel, Jürgen Bläsing, Martin Feneberg, Armin Dadgar, Rüdiger Goldhahn, André Strittmatter

    Published 2025-01-01
    “…Implementing transition metal nitride (TM-nitride) layers by epitaxy into group-III nitride semiconductor layer structures may solve substantial persisting problems for electronic and optoelectronic device configurations and subsequently enable new device classes in the favorable nitride semiconductor family. …”
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    Article
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