Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts by Souad Benykrelef, Sedik Mansouri, Hicham Helal, Abdelaziz Rabehi, Abdelaziz Joti, Zineb Benamara

Subjects: “…n-GaAs…”
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TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs by Franco Ercolano, Luigi Balestra, Sebastian Krause, Stefano Leone, Isabel Streicher, Patrik Waltereit, Michael Dammann, Susanna Reggiani

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A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs by Yatexu Patel, Pouya Valizadeh

Subjects: “…InAlN/GaN…”
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