Search alternatives:
"mos structure" » "most structure" (Expand Search), "amos structure" (Expand Search)
Showing 1 - 6 results of 6 for search '"mos structure"', query time: 0.05s Refine Results
  1. 1
    Formation of titanium oxide thin films by reactive magnetron sputtering

    Formation of titanium oxide thin films by reactive magnetron sputtering by N. Villa, D. A. Golosov, T. D. Nguyen

    Published 2019-07-01
    Subjects:
    Get full text
    Article
    Save to List
    Saved in:
  2. 2
    Simulation of forward current-voltage characteristics for Schottky diodes with MOS trenches

    Simulation of forward current-voltage characteristics for Schottky diodes with MOS trenches by J. A. Solovjov

    Published 2021-10-01
    Subjects:
    Get full text
    Article
    Save to List
    Saved in:
  3. 3
    High reactivity of H2O vapor on GaN surfaces

    High reactivity of H2O vapor on GaN surfaces by Masatomo Sumiya, Masato Sumita, Yasutaka Tsuda, Tetsuya Sakamoto, Liwen Sang, Yoshitomo Harada, Akitaka Yoshigoe

    Published 2022-12-01
    Subjects:
    Get full text
    Article
    Save to List
    Saved in:
  4. 4
    Modeling Asymmetric Shift in the Threshold Voltage of MOS Structures under Thermal Field Treatment

    Modeling Asymmetric Shift in the Threshold Voltage of MOS Structures under Thermal Field Treatment by O. V. Aleksandrov, N. N. Morozov

    Published 2025-05-01
    Subjects: “…mos structure…”
    Get full text
    Article
    Save to List
    Saved in:
  5. 5
    Modelling the behavior of metal-oxide-semiconductor structures under thermal field treatment

    Modelling the behavior of metal-oxide-semiconductor structures under thermal field treatment by Олег Викторович Александров, Никита Николаевич Морозов

    Published 2025-02-01
    Subjects: “…MOS structure…”
    Get full text
    Article
    Save to List
    Saved in:
  6. 6
    Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures

    Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures by Takuma Kobayashi, Hiroki Fujimoto, Shinji Kamihata, Keiji Hachiken, Masahiro Hara, Heiji Watanabe

    Published 2025-01-01
    Subjects:
    Get full text
    Article
    Save to List
    Saved in:

Search Tools: