Impact of post-deposition annealing on SiO2/SiC interfaces formed by plasma nitridation of the SiC surface and SiO2 deposition by Hiroki Fujimoto, Takuma Kobayashi, Heiji Watanabe

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Nitridation Process Optimization of 4H-SiC Gate Oxidation by CHEN Ximing, LI Chengzhan, ZHAO Yanli, DENG Xiaochuan, ZHANG Bo

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Development of High Temperature Oxidation Technology for SiC and Analysis on the Characteristics of its Interface by ZHAO Yanli, LI Chengzhan, JIANG Huaping, XUN Hengyu

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Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures by Takuma Kobayashi, Hiroki Fujimoto, Shinji Kamihata, Keiji Hachiken, Masahiro Hara, Heiji Watanabe

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p-CuGaO2/β-Ga2O3 interfaces: A high-throughput approach for interface prediction and generation for power device applications by Chowdam Venkata Prasad, Jang Hyeok Park, Qui Thanh Hoai Ta, Kyong Jae Kim, Ho Jung Jeon, Muzaffar Ali Mir, Mohsin Raza, Nguyen Ngoc Tri, Honggyun Kim, Madani Labed, You Seung Rim

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