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    Physics-Based Compact Model of Independent Dual-Gate BEOL-Transistors for Reliable Capacitorless Memory by Lihua Xu, Kaifei Chen, Zhi Li, Yue Zhao, Lingfei Wang, Ling Li

    Published 2024-01-01
    “…In awareness of the above effects, this model bridges fabrication-based material properties and structural parameters, assisting in a threshold fluctuation-resistant operation scheme for capacitorless multi-bit memory, showing a great potential in future monolithic integration circuit design using BEOL-transistor.…”
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