Showing 181 - 200 results of 282 for search '"integrated circuit"', query time: 0.05s Refine Results
  1. 181
  2. 182

    High transmission in 120-degree sharp bends of inversion-symmetric and inversion-asymmetric photonic crystal waveguides by Wei Dai, Taiki Yoda, Yuto Moritake, Masaaki Ono, Eiichi Kuramochi, Masaya Notomi

    Published 2025-01-01
    “…Abstract Bending loss is one of the serious problems for constructing nanophotonic integrated circuits. Recently, many works reported that valley photonic crystals (VPhCs) enable significantly high transmission via 120-degree sharp bends. …”
    Get full text
    Article
  3. 183
  4. 184
  5. 185
  6. 186
  7. 187

    Protocomputing Architecture over a Digital Medium Aiming at Real-Time Video Processing by Aoi Tanibata, Alexandre Schmid, Shinya Takamaeda-Yamazaki, Masayuki Ikebe, Masato Motomura, Tetsuya Asai

    Published 2018-01-01
    “…A digital medium is selected for the physical mapping of the protoarchitecture as a way to benefit from reliable advanced integrated circuits fabrication technologies. The extraction of dense motion vector fields from textureless objects in a video sequence is selected as a realistic application. …”
    Get full text
    Article
  8. 188
  9. 189

    Simulation of Proton Beam Effects in Thin Insulating Films by Ljubinko Timotijevic, Irfan Fetahovic, Djordje Lazarevic, Milos Vujisic

    Published 2013-01-01
    “…Effects of exposing several insulators, commonly used for various purposes in integrated circuits, to beams of protons have been investigated. …”
    Get full text
    Article
  10. 190
  11. 191
  12. 192

    DESIGN PRINCIPLES AND BLOCK SCHEMES OF THE PROBE AUTOMATIC INSPECTION SYSTEMS FOR MICROAND NANOELECTRONICS ON A WAFER by V. A. Minchenko, G. F. Kovalchuk, S. B. Shkolyk

    Published 2015-04-01
    “…The sources of wideband signals distortion and errors of probe inspection systems for large integrated circuits inspection as well as transient response of high speed contacting probes are considered with the OTDR device with picosecond resolution. …”
    Get full text
    Article
  13. 193

    Layout and Thermal Analysis of Power Devices Using a PC/XC by J. N. Avaritsiotis, G. Eleftheriades

    Published 1990-01-01
    “…Thermal analysis during the design process is an essential step towards the achievement of high reliability in modern high density hybrid and integrated circuits. Thermal analysis is also essential for modern, high density PCBs. …”
    Get full text
    Article
  14. 194
  15. 195

    Drastic enhancements of direct and indirect light emissions from Ge microbridge web-structures via efficient light confinements by Takahiro Inoue, Ayaka Odashima, Masaki Nagao, Kentarou Sawano

    Published 2025-01-01
    “…These findings will, therefore, widen the applicability and raise the potentiality of here-proposed Ge web-structure microbridges toward Si optical integrated circuits.…”
    Get full text
    Article
  16. 196

    Surface Electric Potential Measurement with a Static Probe by R. I. Vorobey, O. K. Gusev, A. I. Zharin, V. A. Mikitsevich, K. U. Pantsialeyeu, A. V. Samarina, A. I. Svistun, A. K. Tyavlovsky, K. L. Tyavlovsky

    Published 2023-08-01
    “…Surface electric potential measurements are widely used in non-destructive inspection and testing of precision surfaces, for example, in the production of semiconductor devices and integrated circuits. Features of the construction and application of devices for measuring the surface electric potential using an immovable reference electrode are considered. …”
    Get full text
    Article
  17. 197

    Design of a subnonsecond Gauusisan pulse generator based on the RF transistor by YANG Feng1, XUE Quan2, CHAN Chi-hao2

    Published 2005-01-01
    “…A simple and low cost subnonsecond Gaussian pulse generator was developed using RF transistor,chip resistors,and chip capacitors.The generator utilized a differential circuit to convert signal from the FPGA into a pairs of positive and negative pulses,which was then used to control the “on” and “off” states of the RF transistor,thus generating an ultra-short pulse through the charging and discharging of the capacitor.The measured results shows that output waveform have 0.8ns pulse duration and morn than 1.8V from an input wave of 25MHz repetition rate.Good agreement between the measured and calculated results is achieved.This circuits is suitable for microwave integrated circuits(MIC).…”
    Get full text
    Article
  18. 198
  19. 199
  20. 200