Effects of insertion of an h-AlN monolayer spacer in Pt-WSe2-Pt field-effect transistors by Ken-Ming Lin, Po-Jiun Chen, Chih-Piao Chuu, Yu-Chang Chen

“…We observe that $$V_\text {g}$$ V g shifts the profile of the transmission function by an energy of $$\alpha (e V_{\text {g}})$$ α ( e V g ) , where $$\alpha$$ α represents the gate-controlling efficiency. We observed that $$\alpha _{\text {in}}=83\%$$ α in = 83 % and $$\alpha _{\text {out}}=33\%$$ α out = 33 % , corresponding to whether the Fermi energy is located inside or outside the band gap. …”
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