Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate by Xuanyi Zhao, Shouzhi Wang, Lei Liu, Qiubo Li, Jiaoxian Yu, Guodong Wang, Chang Liang, Zhongxin Wang, Han Hao, Xiangang Xu, Lei Zhang

“…Abstract As the representative of substrate material, gallium nitride (GaN) has excellent mechanical properties and high thermal stability. …”
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Design of a Four-Branch Optical Power Splitter Based on Gallium-Nitride Using Rectangular Waveguide Coupling for Telecommunication Links by Retno W. Purnamaningsih, Nji R. Poespawati, Elhadj Dogheche

“…This paper reports design of a simple four-branch optical power splitter using five parallel rectangular waveguides coupling in a gallium-nitride (GaN) semiconductor/sapphire for telecommunication links. …”
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INVESTIGATION OF POLARIZATION IN HETEROSTRUCTURES WITH THE QUANTUM WELL AlGaN / GaN USING CAPACITANCE-VOLTAGE CHARACTERISTICS by O. A. Ruban, P. P. Maltsev

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GaN Nanopowder synthesis via nitridation: Fabrication and characterization of GaN thin Films for UV detection applications by Mahdi Hajimazdarani, Peyman Yaghoubizadeh, Ali Jafari, Ali Kenarsari Moghadam, Mojtaba Hajimazdarani, Mohammad Javad Eshraghi

Subjects: “…Gallium nitride…”
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An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs by Yicong Dong, Eiji Yagyu, Takashi Matsuda, Koon Hoo Teo, Chungwei Lin, Shaloo Rakheja

Subjects: “…Gallium nitride…”
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A review of GaN RF devices and power amplifiers for 5G communication applications by Hao Lu, Meng Zhang, Ling Yang, Bin Hou, Rafael Perez Martinez, Minhan Mi, Jiale Du, Longge Deng, Mei Wu, Srabanti Chowdhury, Xiaohua Ma, Yue Hao

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Fabrication of GaN vertical junction barrier Schottky diode by Mg diffusion from shallow N/Mg ion-implantation segment by Woong Kwon, Yuta Itoh, Atsushi Tanaka, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano

Subjects: “…gallium nitride…”
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Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm² by Jialun Li, Renqiang Zhu, Ka Ming Wong, Kei May Lau

Subjects: “…Gallium nitride…”
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Analyzing frequency spectrum and Total Harmonic Distortion for high switching frequency operation of GaN-based filter-less multilevel cascaded H-bridge inverter by Ramkrishna Mishan, Xingang Fu, Chanakya Hingu, Poria Fajri

Subjects: “…Gallium nitride switch…”
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RETRACTED: Analysis of Scalable Resonant DC–DC Converter Using GaN Switches for xEV Charging Stations by Rajanand Patnaik Narasipuram, Subbarao Mopidevi, Anton Dianov, Amit Singh Tandon

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Augmented Twin-Nonlinear Two-Box Behavioral Models for Multicarrier LTE Power Amplifiers by Oualid Hammi

“…Experimental validation on gallium nitride based Doherty power amplifiers illustrates the accuracy enhancement and complexity reduction achieved by the proposed models. …”
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Dielectric function and thermo-optic coefficients of silicon-doped GaN substrates at elevated temperature from 298 K to 873 K in the UV-Vis-NIR spectrum by Subiao Bian, Xi Chen, Changcai Cui

“…Abstract Understanding the thermal influence on gallium nitride (GaN) single crystal substrates is critical for the advancement of GaN-based optoelectronic devices. …”
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Zinc-Blende GeC Stabilized on GaN (001): An Ab Initio Study by J. H. Camacho-García, Ma L. Ruiz-Peralta, G. Hernández-Cocoletzi, A. Bautista-Hernández, M. Salazar-Villanueva, A. Escobedo-Morales, E. Chigo-Anota, J. C. Moreno-Hernández

“…First-principle calculations have been performed to explore the initial stages of the zinc blende-like germanium carbide epitaxial growth on the gallium nitride (001)-(2 × 2) surface. First, we studied the Ge/C monolayer adsorption and incorporation at high symmetry sites. …”
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Maximizing temperature sensitivity in a one-dimensional photonic crystal thermal sensor by Manal A. Maher, Arafa H. Aly, Mohamed S. Esmail, S. E.-S. Abd El-Ghany

“…Abstract This paper focuses on a defective one-dimensional photonic crystal thermal sensor with fabricated layers of gallium nitride, glycerin, and air. The transmission features of this sensor have been presented based on the transfer matrix approach using MATLAB software. …”
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A Comprehensive Examination of Bandgap Semiconductor Switches by S. Siva Subramanian, R. Saravanakumar, Bibhu Prasad Ganthia, S. Kaliappan, Surafel Mustefa Beyan, Maitri Mallick, Monalisa Mohanty, G. Pavithra

“…At this moment, titanium dioxide and gallium nitride are the most prospective semiconductor materials because of their great features, established technology, and enough supply of raw components. …”
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Design of Multijunction Photovoltaic Cells Optimized for Varied Atmospheric Conditions by C. Zhang, J. Gwamuri, R. Andrews, J. M. Pearce

“…Band gap engineering provides an opportunity to not only provide higher overall conversion efficiencies of the reference AM1.5 spectra but also customize PV device design for specific geographic locations and microenvironments based on atmospheric conditions characteristic to that particular location. Indium gallium nitride and other PV materials offer the opportunity for limited bandgap engineering to match spectra. …”
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Enhancing Carriers’ Confinement by Introducing BAlGaN Quantum Barriers for the Better Optoelectronic Performance of Deep UV LEDs by Jamshad Bashir, Muhammad Usman, Dmitri Sergeevich Arteev, Zoya Noor, Ahmed Ali

“…Ultraviolet light-emitting diodes (LEDs) based on Aluminum Gallium Nitride (AlGaN) suffer from poor carriers’ confinement effect, one possible solution to this problem is to increase the barrier heights for carriers by increasing Aluminum content in quantum barriers (QBs), which results in a higher turn-on voltage. …”
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Simulation and Experimental Study of the Single-Pulse Femtosecond Laser Ablation Morphology of GaN Films by Mingyuan Wang, Tong Zhang, Yanping Yuan, Zhiyong Wang, Yanlei Liu, Lin Chen

“…Gallium nitride (GaN) exhibits distinctive physical and chemical properties that render it indispensable in a multitude of electronic and optoelectronic devices. …”
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Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S₂₂ and h₂₁: An Effective Machine Learning Approach by Zegen Zhu, Gianni Bosi, Antonio Raffo, Giovanni Crupi, Jialin Cai

“…The device under test (DUT) is a 0.25-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) substrate, which has a large gate periphery of 1.5 mm. …”
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An Improved Topology of Isolated Bidirectional Resonant DC-DC Converter Based on Wide Bandgap Transistors for Electric Vehicle Onboard Chargers by Md. Tanvir Shahed, A. B. M. Harun-Ur Rashid

“…A 5 kW CLLL converter with an input range of 400–460 V direct current (DC) and an output range of 530–610 V DC, and a switching frequency of 1 MHz has been designed and investigated under various loading scenarios. Gallium nitride (GaN) switching device-based designs achieved the highest levels of efficiency among the switching devices. …”
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