Flash Memory for Synaptic Plasticity in Neuromorphic Computing: A Review by Jisung Im, Sangyeon Pak, Sung-Yun Woo, Wonjun Shin, Sung-Tae Lee

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A Lightweight and Configurable Flash Filesystem for Low-Power Devices by Ondrej Kachman, Peter Malík, Marcel Baláž, Libor Majer, Gábor Gyepes

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Design and Implementation of Data Logging Unit in Train Speed Protection Device by DUAN Hong-liang, WANG Bao-hua, PEI Jian

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Monte Carlo Simulation of Flash Memory Elements’ Electrophysical Parameters by O. G. Zhevnyak, V. M. Borzdov, A. V. Borzdov, A. N. Petlitsky

Subjects: “…flash memory…”
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Compact Modeling of 3D NAND Flash Memory With Ferroelectric Characteristics: A Comparative Analysis of O/N/O and O/N/F Structures by Sunghyun Woo, Jihwan Lee, Gyunseok Ryu, Myounggon Kang

Subjects: “…3D NAND flash memory…”
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A machine learning framework for predictive electron density modelling to enhance 3D NAND flash memory performance by Dikendra Verma, Upendra Mohan Bhatt, Anurag Vidyarthi

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Balancing Page Endurance Variation Between Layers to Extend 3D NAND Flash Memory Lifetime by Jialin Wang, Yi Fan, Yajuan Du, Siyi Huang, Yu Wan

Subjects: “…3D NAND’s flash memory…”
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Fast-Read Storage Performance by Thyristor Operation in 3-D Flash Memory by Tomoya Sanuki, Hideto Horii, Takashi Maeda

Subjects: “…3D flash memory…”
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Origin of the Temperature Dependence of Gate-Induced Drain Leakage-Assisted Erase in Three-Dimensional <span style="font-variant: small-caps">nand</span> Flash Memories by David G. Refaldi, Gerardo Malavena, Luca Chiavarone, Alessandro S. Spinelli, Christian Monzio Compagnoni

Subjects: “…<span style="font-variant: small-caps">nand</span> Flash memory…”
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Discrete-Trap Effects on 3-D NAND Variability &#x2013; Part II: Random Telegraph Noise by Gerardo Malavena, Salvatore M. Amoroso, Andrew R. Brown, Plamen Asenov, Xi-Wei Lin, Victor Moroz, Mattia Giulianini, David Refaldi, Christian Monzio Compagnoni, Alessandro S. Spinelli

Subjects: “…3-DNAND Flash memories…”
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Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation by Su‐Hwan Choi, Jae‐Min Sim, Jeongmin Shin, Seong‐Hwan Ryu, Taewon Hwang, So Young Lim, Hye‐Jin Oh, Jae‐Hyeok Kwag, Jun‐Yeoub Lee, Ki‐Cheol Song, Yeonhee Lee, Minju Song, Junghwan Kim, Chang‐Kyun Park, Yun‐Heub Song, Jin‐Seong Park

Subjects: “…3D NAND flash memories…”
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