Interface-Driven Electrothermal Degradation in GaN-on-Diamond High Electron Mobility Transistors by Huanran Wang, Yifan Liu, Xiangming Dong, Abid Ullah, Jisheng Sun, Chuang Zhang, Yucheng Xiong, Peng Gu, Ge Chen, Xiangjun Liu

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Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility by Julien Bassaler, Jash Mehta, Idriss Abid, Leszek Konczewicz, Sandrine Juillaguet, Sylvie Contreras, Stéphanie Rennesson, Sebastian Tamariz, Maud Nemoz, Fabrice Semond, Julien Pernot, Farid Medjdoub, Yvon Cordier, Philippe Ferrandis

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Effect of Temperature on Silicon Carriers Mobilities Using MATLAB by Saad N. Ibrahim

Subjects: “…Carrier Mobilities, Doping Concentration, Hole Mobility, Electron Mobility.…”
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Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors by GE Mei; LI Yi; WANG Zhiliang; ZHU Youhua

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Next-generation nanotechnology: Exploring the potential of In2S3-based perovskite solar cells by Soumya Ranjan Mishra, Vishal Gadore, Md. Ahmaruzzaman

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Enhanced Conductivity of Multilayer Copper–Carbon Nanofilms via Plasma Immersion Deposition by Haotian Weng, Xiwu Zhang, Xuan Liu, Yunhui Tang, Hewei Yuan, Yang Xu, Kun Li, Xiaolu Huang

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3 kV monolithic bidirectional GaN HEMT on sapphire by Md Tahmidul Alam, Swarnav Mukhopadhyay, Md Mobinul Haque, Shubhra S. Pasayat, Chirag Gupta

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Monte Carlo Simulation of Flash Memory Elements’ Electrophysical Parameters by O. G. Zhevnyak, V. M. Borzdov, A. V. Borzdov, A. N. Petlitsky

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Enhancing Device Performance with High Electron Mobility GeSn Materials by Yannik Junk, Omar Concepción, Marvin Frauenrath, Jingxuan Sun, Jin Hee Bae, Florian Bärwolf, Andreas Mai, Jean‐Michel Hartmann, Detlev Grützmacher, Dan Buca, Qing‐Tai Zhao

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Numerical simulation of the sensor for toxic nanoparticles based on the heterostructure field effect transistor by V. S. Volcheck, V. R. Stempitsky

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High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate by Yinhe Wu, Xingchi Ma, Longyang Yu, Xin Feng, Shenglei Zhao, Weihang Zhang, Jincheng Zhang, Yue Hao

Subjects: “…AlGaN channel high electron mobility transistor…”
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Role of Oxygen Vacancy in the Performance Variability and Lattice Temperature of the Stacked Nanosheet FET by Shubham, Rajan Kumar Pandey

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Impact of Defects on the Low-Field Electron Mobility in GaN-on-Si HEMTs by Ran Zhou, D. J. Gravesteijn, R. J. E. Hueting

Subjects: “…High electron mobility transistors…”
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Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT by A. V. Sapozhnikov, I. S. Pushnitsa, A. L. Dudin, V. V. Perepelovskiy

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Low-temperature Minimum in the Electrical Resistivity of the Bi1.9Lu0.1Te3 by O.N. Ivanov, M.N. Yaprintsev, R.A. Lyubushkin, O.N. Soklakova

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Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs by Changju Zhu, Luhong Mao, Fan Zhao, Xurui Mao, Weilian Guo

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Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron... by A. D. Yunik, A. H. Shydlouski

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AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation by Pingyu Cao, Kepeng Zhao, Harm Van Zalinge, Ping Zhang, Miao Cui, Fei Xue

Subjects: “…metal-insulator-semiconductor high-electron-mobility transistors…”
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N‐oxide‐Functionalized Bipyridines as Strong Electron‐Deficient Units to Construct High‐Performance n‐Type Conjugated Polymers by Mingwei Li, Wenhao Li, Junkang Zhou, Xiaowen Tian, Hongxiang Li, Zhen Jiang, Di Liu, Yunqi Liu, Yang Wang, Yongqiang Shi

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Analytical Modeling of GaN-HEMT Considering Finite Width of Two-Dimensional Electron Gas by Behnam Jafari Touchaei, Majid Shalchian

Subjects: “…gallium nitride high electron mobility transistors…”
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