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  1. 1
    SnO Nanosheet Transistor with Remarkably High Hole Effective Mobility and More than Six Orders of Magnitude On-Current/Off-Current

    SnO Nanosheet Transistor with Remarkably High Hole Effective Mobility and More than Six Orders of Magnitude On-Current/Off-Current by Kuan-Chieh Chen, Jiancheng Wu, Pheiroijam Pooja, Albert Chin

    Published 2025-04-01
    Subjects: “…effective mobility…”
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  2. 2
    The Extraction of the Density of States of Atomic-Layer-Deposited ZnO Transistors by Analyzing Gate-Dependent Field-Effect Mobility

    The Extraction of the Density of States of Atomic-Layer-Deposited ZnO Transistors by Analyzing Gate-Dependent Field-Effect Mobility by Minho Yoon

    Published 2024-10-01
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