Analysis and application of electrostatic discharge testing standards for device level charged device models by Jiang Hui, Tang Zhen, Wang Qianqian, Wan Yongkang, Yu Yongjian

Subjects: “…charged device model…”
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The Impact of Non‐Monolithic Semiconductor Capacitance on Organic Electrochemical Transistors Performance and Design by Ned E. Dreamer, Dimitrios A. Koutsouras, Morteza Hassanpour Amiri, Paschalis Gkoupidenis, Kamal Asadi

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Automatic Generation Technology of Safety Measures for Digital Substation Based on Improved Support Vector Machine by Yabing YAN, Xu CHU, Haolong XIAO, Wenwu LIANG, Hui LI, Zhenxing XIA

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Spike-Afferent Visual Optoelectronic Nerve (SAVON) for Retinomorphic Sensing Applications by Kritika Bhattacharya, Manoj Kumar, Samaresh Das

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An overview of solar cell simulation tools by Abu Kowsar, Sumon Chandra Debnath, Md. Shafayet-Ul-Islam, Mohammad Jobayer Hossain, Mainul Hossain, AFM Kamal Chowdhury, Galib Hashmi, Syed Farid Uddin Farhad

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Device Modeling Method for the Entire Process of Energy-Saving Retrofit of a Refrigeration Plant by Xuanru Xu, Lun Zhang, Jun Chen, Qingbin Lin, Junjie Chen

Subjects: “…device modeling…”
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Simulating Organic Thin Film Transistors Using Multilayer Perceptron Regression Models to Enable Circuit Design by Laurie E. Calvet, Sami El‐Nakouzi, Zonglong Li, Yerin Kim, Amer Zaibi, Patryk Golec, Ie Mei Bhattacharyya, Yvan Bonnassieux, Lina Kadura, Benjamin Iñiguez

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MLFoMpy: A post-processing tool for semiconductor TCAD data with machine-learning capabilities by Enrique Comesaña, Julian G. Fernández, Natalia Seoane, Antonio García-Loureiro

Subjects: “…Semiconductor device modeling…”
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Modelling of SiC and GaN transistors based on pulsed S-parameter measurements by Martin Hergt, Bernhard Hammer, Martin Sack, Lukas W. Mayer, Sebastian Nielebock, Marc Hiller

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Device optimization of CsPbI2Br-based inorganic perovskite solar cells using different charge transport layers via SCAPS-1D by Muhammad Siddique, Muhammad Sultan, M.Shahid Iqbal Khan, Syed Hamza Safeer

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Enhancement and Expansion of the Neural Network-Based Compact Model Using a Binning Method by Jinyoung Choi, Hyunjoon Jeong, Sangmin Woo, Hyungmin Cho, Yohan Kim, Jeong-Taek Kong, Soyoung Kim

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Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks by Xiaoying Tang, Zhiqiang Li, Lang Zeng, Hongwei Zhou, Xiaoxu Cheng, Zhenjie Yao

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Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT by Rui Jin, Yaohua Wang, Li Li, Longlai Xu, Kui Pu, Jun Zeng, Mohamed Darwish

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Analytical Modeling of GaN-HEMT Considering Finite Width of Two-Dimensional Electron Gas by Behnam Jafari Touchaei, Majid Shalchian

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An Analytical Universal Model for Symmetric Double Gate Junctionless Transistors by N. Bora, P. Das, R. Subadar

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Interface trap charges associated reliability analysis of Si/Ge heterojunction dopingless TFET by Suruchi Sharma, Rikmantra Basu, Baljit Kaur

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Origin of the Temperature Dependence of Gate-Induced Drain Leakage-Assisted Erase in Three-Dimensional <span style="font-variant: small-caps">nand</span> Flash Memories by David G. Refaldi, Gerardo Malavena, Luca Chiavarone, Alessandro S. Spinelli, Christian Monzio Compagnoni

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