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    Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm<sup>2</sup>

    Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm<sup>2</sup> by Jialun Li, Renqiang Zhu, Ka Ming Wong, Kei May Lau

    Published 2024-01-01
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