Discovery of a Robust P‐Type Ultrawide Bandgap Oxide Semiconductor: LiGa5O8 by Kaitian Zhang, Vijay Gopal Thirupakuzi Vangipuram, Hsien‐Lien Huang, Jinwoo Hwang, Hongping Zhao

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Design of multi-bandgap metamaterial plate based on composite cylindrical resonators by Zhi Miao, Jianfei Yin, Yu Yang, Yibo Ke, Zhoufu Zheng, Xiaoming Geng, Qian Wang

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Reliability Test on Vienna Rectifier for Wide Bandgap Devices in EV Charging Systems by Bharaneedharan Balasundaram, P. Suresh, Parvathy Rajendran, It Ee Lee, C. Ahamed Saleel

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Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces by Mohamadali Malakoutian, Kelly Woo, Dennis Rich, Ramandeep Mandia, Xiang Zheng, Anna Kasperovich, Devansh Saraswat, Rohith Soman, Youhwan Jo, Thomas Pfeifer, Taesoon Hwang, Henry Aller, Jeongkyu Kim, Junrui Lyu, Janelle Keionna Mabrey, Thomas Andres Rodriguez, James Pomeroy, Patrick E. Hopkins, Samuel Graham, David J. Smith, Subhasish Mitra, Kyeongjae Cho, Martin Kuball, Srabanti Chowdhury

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A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET by Huu Thai Bui, Chun-Hsing Shih, Dang Chien Nguyen

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Low Thermal Resistance of Diamond‐AlGaN Interfaces Achieved Using Carbide Interlayers by Henry T. Aller, Thomas W. Pfeifer, Abdullah Mamun, Kenny Huynh, Marko Tadjer, Tatyana Feygelson, Karl Hobart, Travis Anderson, Bradford Pate, Alan Jacobs, James Spencer Lundh, Mark Goorsky, Asif Khan, Patrick Hopkins, Samuel Graham

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Theoretical study of the Sb-substitution effect on the optoelectronic properties of Cs2AgBiBr6 double perovskite by Lhouceine Moulaoui, Abdelhafid Najim, Marouane Archi, Mohamed Al-Hattab, Omar Bajjou, Anass Bakour, Youssef Lachtioui, Khalid Rahmani, Bouzid Manaut

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Crystal structure modulating performances for 213-nm GeO2 solar-blind photodetectors via DC reactive magnetron sputtering method by Chengming Wei, Jiabao Liu, Xinru Lan, Cheng Yang, Shuiping Huang, Dongdong Meng, Zhengwei Chen, Hongguang Duan, Xu Wang

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Perovskite Solar Cell: Chemical Composition and Bandgap Energy via Machine Learning by Filipi França dos Santos, Kelly Cristine Da Silveira, Gesiane Mendonça Ferreira, Daniella Herdi Cariello, Mônica Calixto de Andrade

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Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communicati... by Gauri Deshpande, J. Ajayan, Sandip Bhattacharya, B. Mounika, Amit Krishna Dwivedi, D. Nirmal

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Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices by Yunwei Ma, Yuan Qin, Matthew Porter, Joseph Spencer, Zhonghao Du, Ming Xiao, Boyan Wang, Yifan Wang, Alan G. Jacobs, Han Wang, Marko Tadjer, Yuhao Zhang

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Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts by Brianna Klein, Andrew Allerman, Andrew Armstrong, Mary Rosprim, Colin Tyznik, Yinxuan Zhu, Chandan Joishi, Chris Chae, Siddharth Rajan

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Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth by Alexander Polyakov, In‐Hwan Lee, Vladimir Nikolaev, Aleksei Pechnikov, Andrew Miakonkikh, Mikhail Scheglov, Eugene Yakimov, Andrei Chikiryaka, Anton Vasilev, Anastasia Kochkova, Ivan Shchemerov, Alexey Chernykh, Stephen Pearton

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2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates by Md Tahmidul Alam, Jiahao Chen, Kenneth Stephenson, Md Abdullah-Al Mamun, Abdullah Al Mamun Mazumder, Shubhra S. Pasayat, Asif Khan, Chirag Gupta

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Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility by Julien Bassaler, Jash Mehta, Idriss Abid, Leszek Konczewicz, Sandrine Juillaguet, Sylvie Contreras, Stéphanie Rennesson, Sebastian Tamariz, Maud Nemoz, Fabrice Semond, Julien Pernot, Farid Medjdoub, Yvon Cordier, Philippe Ferrandis

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