Effect of the electron irradiation on electrical properties of n-InSe and their anisotropy by I. V. Mintyanskii, P. I. Savitskii, Z. D. Kovalyuk, V. T. Maslyuk, I. G. Megela

“…It is established that at higher doses the mobility along the layers and vertical conductivity essentially decrease whereas the conductivity anisotropy and energy barrier between the layers increase significantly. …”
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High field performance of Si-doped n-AlN layers grown using pulsed MOCVD by Abdullah Al Mamun Mazumder, Tariq Jamil, Mafruda Rahman, Muhammad Ali, Grigory Simin, Asif Khan

“…Here using them as the drift layer for a quasi-vertical conduction Schottky barrier, we show their ability to withstand high reverse bias voltages and sustain an electrical field as high as 9.9 MV cm ^−1 . …”
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