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1
An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs
Published 2025-01-01Subjects: Get full text
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3
Process-Dependent Evolution of Channel Stress and Stress-Induced Mobility Gain in FinFET, Normal GAAFET, and Si/SiGe Hybrid Channel GAAFET
Published 2025-01-01Subjects: Get full text
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4
TCAD Simulation Study of Cylindrical Vertical Double-Surrounding-Gate a-InGaZnO FETs and Geometric Parameter Optimization
Published 2025-01-01Subjects: Get full text
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5
TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs
Published 2025-03-01Subjects: Get full text
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6
A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave Wireless Transmission
Published 2024-12-01Subjects: Get full text
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7
Aggressively scaled T-Gated GaN-on-silicon RF power HEMT featuring step graded SRL-AlGaN buffer for next generation broad band power amplifiers
Published 2025-03-01Subjects: Get full text
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8
Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks
Published 2024-01-01Subjects: “…technology computer-aided design (TCAD) simulation…”
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9
Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs
Published 2025-01-01Subjects: Get full text
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