Microstructure characterization, phase transition, and device application of phase-change memory materials by Kai Jiang, Shubing Li, Fangfang Chen, Liping Zhu, Wenwu Li

Subjects: “…Phase-change memory…”
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GeTe/Sb2Te3 Super‐Lattices: Impact of Atomic Structure on the RESET Current of Phase‐Change Memory Devices by Damien Térébénec, Françoise Hippert, Nicolas Bernier, Niccolo Castellani, Pierre Noé

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Atomic Pathways of Crystal-to-Crystal Transitions and Electronic Origins of Resistive Switching in MnTe for Ultralow-Power Memory by Rui Wu, Nian-Ke Chen, Ming-Yu Ma, Bai-Qian Wang, Yu-Ting Huang, Bin Zhang, Xian-Bin Li

Subjects: “…phase change memory…”
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Electrical Set-Reset Phenomenon in Thallium Doped Ge-Te Glasses Suitable for Phase Change Memory Applications by M.M. Rahman, K. Rukmani, S. Asokan

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Performance and Scalability of Strain Engineered 2D MoTe₂ Phase-Change Memristors by Maria Vitoria Guimaraes Leal, Ahmad Azizimanesh, Nazmul Hasan, Stephen M. Wu

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Emerging horizons in phase-change materials for non-volatile memory by Yan Chen, Yuqiao Le, Lei Chen, Haisong Liu, Tangyou Sun, Xingpeng Liu, Fabi Zhang, Haiou Li, XinXin Hu, Ying Peng, Chengyan Liu, Min Hong

Subjects: “…Phase change memory…”
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Inkjet‐Printed Phase Change Memory Devices by Hanglin He, Dhananjeya Kumaar, Kevin Portner, Till Zellweger, Florian M. Schenk, Simon Wintersteller, Vitor Vlnieska, Alexandros Emboras, Vanessa Wood, Maksym Yarema

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Machine learning for discrimination of phase‐change chalcogenide glasses by Qundao Xu, Meng Xu, Siqi Tang, Shaojie Yuan, Ming Xu, Wei Zhang, Xian‐Bin Li, Zhongrui Wang, Xiangshui Miao, Chengliang Wang, Matthias Wuttig

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Enhancing Ga─Sb Bonds by GaSb Co‐Doping Ge2Sb2Te5 for High Speed and Thermal Stability Phase Change Memory by Ke Gao, Ruizhe Zhao, Xin Li, Jingwei Cai, Hao Tong, Xiangshui Miao

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Understanding the Effects of Ta Doping in Sb2Te3 for High‐Performance Phase Change Memory by Hansang Sung, Jaemin Park, Siwoo Kim, Hyoin Song, Chanwoong Park, Jaein Park, Sucheol Ju, Heon Lee

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Sb‐Se‐based electrical switching device with fast transition speed and minimized performance degradation due to stable mid‐gap states by Xianliang Mai, Qundao Xu, Zhe Yang, Huan Wang, Yongpeng Liu, Yinghua Shen, Hengyi Hu, Meng Xu, Zhongrui Wang, Hao Tong, Chengliang Wang, Xiangshui Miao, Ming Xu

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A Readout Scheme for PCM-Based Analog In-Memory Computing With Drift Compensation Through Reference Conductance Tracking by Alessio Antolini, Andrea Lico, Francesco Zavalloni, Eleonora Franchi Scarselli, Antonio Gnudi, Mattia Luigi Torres, Roberto Canegallo, Marco Pasotti

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The Role of Phase-Change Memory in Edge Computing and Analog In-Memory Computing: An Overview of Recent Research Contributions and Future Challenges by Alessio Antolini, Francesco Zavalloni, Andrea Lico, Said Quqa, Lorenzo Greco, Mauro Mangia, Fabio Pareschi, Marco Pasotti, Eleonora Franchi Scarselli

Subjects: “…phase-change memory (PCM)…”
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Influence of the Composition on the Thermoelectric and Electro-physical Properties of Ge-Sb-Te Thin Films for Phase Change Memory Application by P.I. Lazarenko, A.A. Sherchenkov, S.A. Kozyukhin, D.Y. Terekhov, A.O. Yakubov, A.V. Babich, A.S. Shuliatyev, I.V. Sagunova, E.N. Redichev

Subjects: “…Phase change memory…”
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SpecPCM: A Low-Power PCM-Based In-Memory Computing Accelerator for Full-Stack Mass Spectrometry Analysis by Keming Fan, Ashkan Moradifirouzabadi, Xiangjin Wu, Zheyu Li, Flavio Ponzina, Anton Persson, Eric Pop, Tajana Rosing, Mingu Kang

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A Survey of Hybrid Main Memory Architectures by Ahmet Sertbaş, Murat Koca, İsa Avcı, Zerrin Yıldız Çavdar

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Enhancing the security of memory in cloud infrastructure through in‐phase change memory data randomisation by Xianzhong Zhou, Ying Wang

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