A technique to reduce the probability of band-to-band tunneling for eliminating injected minority carriers in nano scale field-effect diode by Arash Rezaei, Ali Aaghar Orouji

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Improving Performance of Germanium-Based Vertical Tunneling Field Effect Transistor Using GaAs as Channel by Shoaib Babaei tooski, Mohammad Javad Rezaei, Seyed Manoochehr Hoseini

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Optimization of a-IGZO top gate thin film transistor for ammonia gas sensor by Abhinandan Jain, Praveen Kumar Jain

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On the origin of off-state leakage current in n-p-n vertical structures for GaN-based trench-MOSFETs by Maciej Kamiński, Kamil Abendroth, Aneta Gołębiowska, Aleksander Szczepański, Krzysztof Urbanowski, Ernest Brzozowski, Jarosław Tarenko, Oskar Sadowski, Justyna Wierzbicka, Renata Kruszka, Kamil Kosiel, Joanna Jankowska-Śliwińska, Iwona Jóźwik, Anna Szerling, Krystian Król, Paweł Prystawko, Michał Boćkowski, Izabella Grzegory, Andrzej Taube

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High Mobility, High Carrier Density SnSe2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching by Yuan Huang, Eli Sutter, Bruce A. Parkinson, Peter Sutter

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Random telegraph noise-based analysis of electron traps of sub-30-nm DRAM cell-array transistors in cryogenic operation by Sangwon Lee, Ho Jung Lee, Ga Won Yang, Sungju Choi, Jingyu Park, Seonhaeng Lee, Gang-Jun Kim, Namhyun Lee, Yoon Kim, Myounggon Kang, Rock-Hyun Baek, Changhyun Kim, Ickhyun Song, Dae Hwan Kim

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