Representation of the solution of a nonlinear molecular beam epitaxy equation by Boubaker Smii

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Molecular beam epitaxial In2Te3 electronic devices by Imhwan Kim, Jinseok Ryu, Eunsu Lee, Sangmin Lee, Seokje Lee, Wonwoo Suh, Jamin Lee, Miyoung Kim, Hong seok Oh, Gyu-Chul Yi

“…Abstract We report on the electrical characteristics of field-effect transistors (FETs) and Schottky diodes based on In2Te3 grown on hexagonal boron nitride (h-BN) substrates utilizing molecular beam epitaxy (MBE). A two-step growth method was used to increase surface coverage and large grain sizes for high-quality In2Te3. …”
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Molecular beam epitaxy, photocatalytic solar water splitting, and carrier dynamics of InGaN micro-network deep-nano structures by Ishtiaque Ahmed Navid, Yifan Shen, Peng Zhou, Jonathan Schwartz, Yin Min Goh, Tao Ma, Robert Hovden, Theodore Norris, Zetian Mi

“…We have performed a detailed investigation of the molecular beam epitaxy and characterization of Mg-doped p-type InGaN micro-network nanostructures with lateral dimensions reaching as small as a few nanometers. …”
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Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing by Deyan Dai, Hanqing Liu, Xiangjun Shang, Shizhuo Tan, Qiaozhi Zhang, Chengao Yang, Dongwei Jiang, Xiangbin Su, Haiqiao Ni, Zhichuan Niu

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Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing by Abraham Arias, Nicola Nedev, Susmita Ghose, Juan Salvador Rojas-Ramirez, David Mateos, Mario Curiel Alvarez, Oscar Pérez, Mariel Suárez, Benjamin Valdez-Salas, Ravi Droopad

“…β-Ga2O3 thin films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The films were grown using an elemental gallium source and oxygen supplied by an RF plasma source. …”
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Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1−x)O2 during suboxide molecular beam epitaxy by Wenshan Chen, Kingsley Egbo, Joe Kler, Andreas Falkenstein, Jonas Lähnemann, Oliver Bierwagen

“…The (SnxGe1−x)O2 alloy system is in its infancy, and molecular beam epitaxy (MBE) is a well-suited technique for its thin-film growth, yet it presents challenges in controlling the alloy composition and growth rate. …”
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Impact of Buffer Layer on Electrical Properties of Bow-Tie Microwave Diodes on the Base of MBE-Grown Modulation-Doped Semiconductor Structure by Algirdas Sužiedėlis, Steponas Ašmontas, Jonas Gradauskas, Aurimas Čerškus, Aldis Šilėnas, Andžej Lučun

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DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors by H. C. Chen

“…DC and AC performances of a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor (NERFET) are demonstrated by molecular beam epitaxy (MBE) for the first time. The negative differential resistance (NDR) resulted from the observation of the hot electron real space transfer effect in InGaAs channel. …”
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Mesoscopic model for tumor growth by Elena Izquierdo-Kulich, José Manuel Nieto-Villar

“…According to the model, the value for growth exponent is between 0,25 and 0,5, which includes the value proposed by Kadar-Parisi-Zhang universality class (0,33) and the value proposed by Brú (0,375) related to the molecular beam epitaxy (MBE) universality class. This result suggests that the tumor dynamics are too complex to be associated to a particular universality class.…”
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Raman Spectra of PbTe- and GeTe-Based Monocrystalline Epitaxial Layers by N. Romcevic, B. Hadzic, P. Dziawa, T. Story, W. D. Dobrowolski, M. Romcevic

“…Solid solutions and heterostructures on this basis, obtained by molecular beam epitaxy, are a promising direction for the development of these materials. …”
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Electric-field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling by Dariusz Sztenkiel, Katarzyna Gas, Nevill Gonzalez Szwacki, Marek Foltyn, Cezary Śliwa, Tomasz Wojciechowski, Jarosław Z. Domagala, Detlef Hommel, Maciej Sawicki, Tomasz Dietl

“…Here, we report magnetization changes generated by an electric field in ferromagnetic Ga1−x Mn x N grown by molecular beam epitaxy. Two classes of phenomena have been revealed. …”
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13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD by Richard Brown, Chen Liu, George Seager, Francisco Alvarado, Ka Ming Wong, Adam P. Craig, Richard Beanland, Andrew R. J. Marshall, J. Iwan Davies, Qiang Li

“…The peak detectivity was found to be 4.43 × 1010 cm Hz1/2/W at 9 µm, which is very comparable with similar deep etched detectors grown by molecular beam epitaxy.…”
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Influence of variation in indium concentration and temperature on the threshold current density in InxGa1-xAs/GaAs QD laser diodes by Zainab M. Alharbi, M.S. Al-Ghamdi

“…The influence of variations in indium concentration and temperature on threshold current density (Jth) in InxGa1-xAs/GaAs (x = 0, 0.8 and 0.16) quantum dot (QD) laser diodes – synthesized via molecular beam epitaxy (MBE) with three distinct indium concentrations on GaAs (001) substrates – was meticulously examined. …”
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Improving the efficiency of an optical-to-terahertz converter using sapphire fibers by N. V. Zenchenko, D. V. Lavrukhin, I. A. Glinskiy, D. S. Ponomarev

“…As a photoconductive substrate, we used a semi-infinite LT-GaAs layer (low-temperature grown GaAs; GaAs layer grown by molecular beam epitaxy at a low growth temperature). Additional Si3N4 and Al2O3 layers are intended for reducing leakage currents in the OTC and reducing the reflection of the laser pump pulse from the air/semiconductor interface (Fresnel losses), respectively, at a gap width of 10 μm. …”
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