Overview of the Properties and Formation Process of Interface Traps in MOS and Linear Bipolar Devices by Yanru Ren, Min Zhu, Xuehui Dai, Longxian Li, Minghui Liu

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Highly durable and energy‐efficient probabilistic bits based on h‐BN/SnS2 interface for integer factorization by Joon‐Kyu Han, Jun‐Young Park, Shania Rehman, Muhammad Farooq Khan, Moon‐Seok Kim, Sungho Kim

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Dynamic characteristics of neutral beam etching enabled normally-off recessed-gate GaN MOSHEMT by Yitai Zhu, Haitao Du, Yu Zhang, Haolan Qu, Han Gao, Haodong Jiang, Wenhui Xu, Xin Ou, Xinbo Zou

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An Effective Method to Compensate for Testing Induced SBFET Degradation by Charging Deep-Level Interface Trap by Tiexin Zhang, Fanyu Liu, Lei Shu, Siyuan Chen, Yuchong Wang, Yuchen Wu, Jing Wan, Yong Xu, Shi Li, Yuyang Ding, Bo Li, Zhengsheng Han, Tianchun Ye

Subjects: “…Deep-level interface trap…”
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Design and Optimization of Bilayer InGaSnO and Nitrogen-Doped InSnO Thin-Film Transistors for Enhanced Mobility and Reliability by Weijie Jiang, Li Lu, Chenfei Li, Wenyang Zhang, Wenzhao Wang, Guoli Li, Jingli Wang, Xingqiang Liu, Ablat Abliz, Da Wan

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Low-Pressure Chemical Vapor Deposition SiN_x Process Study and Its Impact on Interface Characteristics of AlGaN/GaN MISHEMTs by Hu Sun, Qian Fan, Xianfeng Ni, Qiang Luo, Xing Gu

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Analyzing the Impact of Gate Oxide Screening on Interface Trap Density in SiC Power MOSFETs Using a Novel Temperature-Triggered Method by Monikuntala Bhattacharya, Michael Jin, Hengyu Yu, Shiva Houshmand, Jiashu Qian, Marvin H. White, Atsushi Shimbori, Anant K. Agarwal

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A Dual Core Source/Drain GAA FinFET by Prachuryya Subash Das, Deepjyoti Deb, Rupam Goswami, Santanu Sharma, Rajesh Saha, Hirakjyoti Choudhury

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Modeling of total ionizing dose (TID) effects on the nonuniform distribution of Si/SiO2 interface trap energy states in MOS devices by Ali Khoshnoud, Javad Yavandhassani

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Analytical Capacitance Model for Carbon Nanotube Field-Effect Transistors Including Interface-Trap Effects by Bin Zhou, Rui Zhan, Zilin Teng, Yiheng Xue, Xiaoyan Hu, Jianhua Jiang, Panpan Zhang

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Enhancing InGaZnO transistor current through high-κ dielectrics and interface trap extraction using single-pulse charge pumping by JaeHyeong Park, Hyo-Bae Kim, Sang Min Yu, Kihwan Kim, Ju Heyuck Baeck, Jiyong Noh, Kwon-Shik Park, Soo-Young Yoon, Ji-Hoon Ahn, Saeroonter Oh

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The Response Frequency of Interface Traps Using a Dual-Frequency Charge-Pumping Method and Its Correlation With 1<italic>/f</italic> Noise by Yi Jiang, Luping Wang, Kai Chen, Rui Su, Luyu Yang, Dawei Gao, Junkang Li, Ran Cheng, Rui Zhang

Subjects: “…Interface traps…”
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