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    Numerical study of 2DEG carrier density of quaternary AlInGaN-based T-gate MOSHEMT grown on UWBG-β-Ga2O3 substrate

    Numerical study of 2DEG carrier density of quaternary AlInGaN-based T-gate MOSHEMT grown on UWBG-β-Ga2O3 substrate by Noual Amina, Touati Zine-eddine, Messai Zitouni, Saidani Okba, Abderrahim Yousfi

    Published 2025-03-01
    Subjects: “…HfO2−MOSHEMT…”
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