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1
In–situ strain control in epitaxial silicon carbide compound semiconductor
Published 2024-12-01Subjects: Get full text
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2
Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si
Published 2025-02-01Subjects: Get full text
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3
Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition
Published 2025-01-01Subjects: Get full text
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