Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-Ferroelectric Zirconia Seed Layer for Memory Applications by Mengxuan Yang, Kaifeng Wang, Bocheng Yu, Zhiyuan Fu, Chang Su, Qianqian Huang, Ru Huang

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Understanding the Slow Erase Operation in IGZO-Channel FeFETs: The Role of Positive Charge Generation Kinetics by Zhuo Chen, Nicolo Ronchi, Roman Izmailov, Hongwei Tang, Mihaela Ioana Popovici, Harold Dekkers, Alexandru Pavel, Geert Van den Bosch, Maarten Rosmeulen, Valeri V. Afanas'Ev, Jan Van Houdt

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Root cause of read after delay in ferroelectric memories by Diqing Su, Shaorui Li, Xiao Wang, Yannan Xu, Qingting Ding, Heng Zhang, Hangbing Lyu

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Ambient Moisture‐Induced Self Alignment of Polarization in Ferroelectric Hafnia by Lu‐Qi Wei, Zhao Guan, Wen‐Yi Tong, Wen‐Cheng Fan, Abliz Mattursun, Bin‐Bin Chen, Ping‐Hua Xiang, Genquan Han, Chun‐Gang Duan, Ni Zhong

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Memory State Dynamics in BEOL FeFETs: Impact of Area Ratio on Analog Write Mechanisms and Charging by Hannes Dahlberg, Oscar Kaatranen, Karl-Magnus Persson, Arto Rantala, Jacek Flak, Lars-Erik Wernersson

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Cross-Temperature FeFETs Enabling Long- and Short-Term Memory for Reservoir Computing Network by Bo Chen, Yifan Wu, Yuwei Qu, Anlin Liu, Yuzhe Hu, Pengpeng Sang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen

Subjects: “…Ferroelectric HZO…”
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Enhancement of electrical properties of morphotropic phase boundary in Hf1-xZrxO2 films by integrating Mo electrode and TiN interlayer for DRAM capacitors by Ju Yong Park, Hyojun Choi, Jaewook Lee, Kun Yang, Sun Young Lee, Dong In Han, Intak Jeon, Chang Hwa Jung, Hanjin Lim, Woongkyu Lee, Min Hyuk Park

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Enhanced Ferroelectricity of Hf‐Based Memcapacitors by Adopting Ti Insert‐Layer and C–V Measurement for Constructing Energy‐Efficient Reservoir Computing Network by Bo Chen, Yifang Wu, Yizhi Liu, Xiaopeng Li, Lu Tai, Pengpeng Sang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen

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Enhancing the Capacitive Memory Window of HZO FeCap Through Nanolaminate Stack Design by Mostafa Habibi, Alireza Kashir, Seungyeol Oh, Hojung Jang, Hyunsang Hwang

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Thermal Noise‐Induced Phase Transition in Multi‐Domain Hf‐Based Antiferroelectric Material: Fatigue and Endurance Performance by Sheng Luo, Zijie Zheng, Zuopu Zhou, Xiao Gong, Gengchiau Liang

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A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide by Li Chen, Lin Wang, Yue Peng, Xuewei Feng, Soumya Sarkar, Sifan Li, Bochang Li, Liang Liu, Kaizhen Han, Xiao Gong, Jingsheng Chen, Yan Liu, Genquan Han, Kah‐Wee Ang

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Effect of post-metallization anneal on monolithic co-integration of Hf0.5Zr0.5O2-based FeFET and CMOS by Jehyun An, Beomjoo Ham, Giryun Hong, Jongseo Park, Bohyeon Kang, Jaeseong Pyo, Sung-Min Ahn, Rock-Hyun Baek

Subjects: “…Hafnium zirconium oxide (HZO)…”
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Resetting the Drift of Oxygen Vacancies in Ultrathin HZO Ferroelectric Memories by Electrical Pulse Engineering by Atif Jan, Stephanie A. Fraser, Taehwan Moon, Yun Seong Lee, Hagyoul Bae, Hyun Jae Lee, Duk‐Hyun Choe, Maximilian T. Becker, Judith L. MacManus‐Driscoll, Jinseong Heo, Giuliana Di Martino

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Herpes zoster ophthalmicus with acute retrobulbar optic neuritis and abducens nerve palsy: a case report by Farshad Afshar, Mohammad Sadegh Khalilian, Mohsen Pourazizi, Mohammad Amin Najafi

Subjects: “…Herpes zoster Ophthalmicus (HZO)…”
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Stacked Nanosheet Gate‐All‐Around Morphotropic Phase Boundary Field‐Effect Transistors by Sihyun Kim, Hyun‐Min Kim, Ki‐Ryun Kwon, Daewoong Kwon

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