TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs by Franco Ercolano, Luigi Balestra, Sebastian Krause, Stefano Leone, Isabel Streicher, Patrik Waltereit, Michael Dammann, Susanna Reggiani

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Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ by El-Yazami Chaimae, Bri Seddik, El Fadl Adiba

Subjects: “…algan/gan hemt…”
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