Study on the Application of Gallium Nitride Transistors in Power Electronics by Renan R. Duarte, Guilherme F. Ferreira, Marco A. Dalla Costa, Carlos H. Barriquello, J. Marcos Alonso

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On the origin of off-state leakage current in n-p-n vertical structures for GaN-based trench-MOSFETs by Maciej Kamiński, Kamil Abendroth, Aneta Gołębiowska, Aleksander Szczepański, Krzysztof Urbanowski, Ernest Brzozowski, Jarosław Tarenko, Oskar Sadowski, Justyna Wierzbicka, Renata Kruszka, Kamil Kosiel, Joanna Jankowska-Śliwińska, Iwona Jóźwik, Anna Szerling, Krystian Król, Paweł Prystawko, Michał Boćkowski, Izabella Grzegory, Andrzej Taube

Subjects: “…Off-current of the GaN transistor…”
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