Gate Failure Behavior and Mechanism of AlGaN/GaN HEMTs Under Transmission Line Pulsed Stress by Y. Ren, Y. Q. Chen, C. Liu, X. B. Xu, R. Gao, D. Y. Lei, P. Lai, Y. Huang, J. He

Subjects: “…GaN HEMT…”
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Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning by J. He, Y. Q. Chen, Z. Y. He, Y. F. En, C. Liu, Y. Huang, Z. Li, M. H. Tang

Subjects: “…GaN HEMT…”
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The Influence of Traps on the Self-Heating Effect and THz Response of GaN HEMTs by Huichuan Fan, Xiaoyun Wang, Xiaofang Wang, Lin Wang

Subjects: “…GaN HEMT…”
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Novel Bidirectional ESD Circuit for GaN HEMT by Pengfei Zhang, Cheng Yang, Jingyu Shen, Xiaorong Luo, Gaoqiang Deng, Shuxiang Sun, Yuxi Wei, Jie Wei

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Research on the Degradation and Failure Mechanisms of the Unclamped-Inductive-Switching Characteristics of p-GaN HEMT Devices by Li Liu, Yulu Zhen, Siqiao Li, Bo Pang, Kai Zeng

Subjects: “…p-GaN HEMT…”
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On the temperature-dependence characterization and modeling of GaN HEMTs by Anwar Jarndal, Lutfi Albasha, Hasan Mir

Subjects: “…GaN HEMT…”
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Next generation of ICeGaNⓇ for superior no load and light load performance by Kalparupa Mukherjee, Jin Zhang, Kaspars Ledins, Carlos Toyos Bada, Nirmana Perera, Loizos Efthymiou, Sheung Wai Fung, Martin Arnold, Giorgia Longobardi, Florin Udrea

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A Novel ANN-PSO Method for Optimizing a Small-Signal Equivalent Model of a Dual-Field-Plate GaN HEMT by Haowen Shen, Wenyong Zhou, Jinye Wang, Hangjiang Jin, Yifan Wu, Junchao Wang, Jun Liu

Subjects: “…GaN HEMT…”
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Internally Harmonic Matched Compact GaN Power Amplifier with 78.5% PAE for 2.45 GHz Wireless Power Transfer Systems by Caoyu Li, Ziliang Zhang, Yi Pei, Changchang Chen, Gang Feng, Yuehang Xu

Subjects: “…GaN HEMT…”
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3 kV monolithic bidirectional GaN HEMT on sapphire by Md Tahmidul Alam, Swarnav Mukhopadhyay, Md Mobinul Haque, Shubhra S. Pasayat, Chirag Gupta

Subjects: “…GaN HEMT…”
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Compact GaN HEMT Power Amplifier MMIC Delivering Over 40 W for Ku-Band Applications by Yeongmin Jang, Wonseok Choe, Minchul Kim, Youngwan Lee, Jinho Jeong

Subjects: “…GaN HEMT…”
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Modelling of SiC and GaN transistors based on pulsed S-parameter measurements by Martin Hergt, Bernhard Hammer, Martin Sack, Lukas W. Mayer, Sebastian Nielebock, Marc Hiller

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Gallium Nitride High Electron Mobility Transistor Device with Integrated On-Chip Array Junction Temperature Monitoring Unit by Yukuan Chang, Yue Su, Mingke Xiao, Jiatao Wu, Xu Zhang, Hongda Chen

Subjects: “…GaN HEMT…”
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Damage Mechanism Analysis of High Field Stress on Cascode GaN HEMT Power Devices by Shuo Su, Yanrong Cao, Weiwei Zhang, Xinxiang Zhang, Chuan Chen, Linshan Wu, Zhixian Zhang, Miaofen Li, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao

Subjects: “…Cascode GaN HEMT power device…”
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Adsorption Characteristics of an AlGaN/GaN Heterojunction on Potassium Ions by Yan Dong, Mengmeng Li, Yanli Liu, Jianming Lei, Haineng Bai, Yanmei Sun, Dunjun Chen, Dongjie Zhu, Rigao Wang, Yi Sun

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A Review of Ku-Band GaN HEMT Power Amplifiers Development by Jihoon Kim

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Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer by Shuxiang Sun, Lulu Liu, Gangchuan Qu, Xintong Xie, J. Ajayan

Subjects: “…GaN HEMT…”
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GaN half-bridges on electrical and thermal co-designed ceramic substrates by Manuel Rueß, Peter Mack, Dominik Koch, Aline Reck, Mathias C.J. Weiser, André Zimmermann, Ingmar Kallfass

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A Long-Range, High-Efficiency Resonant Wireless Power Transfer via Imaginary Turn Ratio Air Voltage Transformer by Hsien-Chung Tang, Chun-Hao Chen, Edward-Yi Chang, Da-Jeng Yao, Wei-Hua Chieng, Jun-Ying He

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Development of GaN-Based, 6.6 kW, 450 V, Bi-Directional On-Board Charger with Integrated 1 kW, 12 V Auxiliary DC-DC Converter with High Power Density by Alessandro Reali, Alessio Alemanno, Fabio Ronchi, Carlo Rossi, Corrado Florian

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