TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs by Franco Ercolano, Luigi Balestra, Sebastian Krause, Stefano Leone, Isabel Streicher, Patrik Waltereit, Michael Dammann, Susanna Reggiani

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The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications by Qian Yu, Sheng Wu, Meng Zhang, Ling Yang, Xu Zou, Hao Lu, Chunzhou Shi, Wenze Gao, Mei Wu, Bin Hou, Gang Qiu, Xiaoning He, Xiaohua Ma, Yue Hao

Subjects: “…GaN…”
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Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer by Boseong Son, Huijin Kim, Young-Woong Lee, Purusottam Reddy Bommireddy, Si-Hyun Park

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Photoconductive Semiconductor Switches: Materials, Physics, and Applications by Vincent Meyers, Lars Voss, Jack D. Flicker, Luciano Garcia Rodriguez, Harold P. Hjalmarson, Jane Lehr, Nicolas Gonzalez, Gregory Pickrell, Soroush Ghandiparsi, Robert Kaplar

Subjects: “…GaN…”
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Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate by Xuanyi Zhao, Shouzhi Wang, Lei Liu, Qiubo Li, Jiaoxian Yu, Guodong Wang, Chang Liang, Zhongxin Wang, Han Hao, Xiangang Xu, Lei Zhang

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Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics by Mohit Kumar, Laurent Xu, Timothée Labau, Jérôme Biscarrat, Simona Torrengo, Matthew Charles, Christophe Lecouvey, Aurélien Olivier, Joelle Zgheib, René Escoffier, Julien Buckley

Subjects: “…p⁺⁺-InGaN…”
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Simulation and Experimental Study of the Single-Pulse Femtosecond Laser Ablation Morphology of GaN Films by Mingyuan Wang, Tong Zhang, Yanping Yuan, Zhiyong Wang, Yanlei Liu, Lin Chen

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Mosaic Structure of GaN Film Grown on Sapphire Substrate by AP-MOCVD: Impact of Thermal Annealing on the Tilt and Twist Angles by J. Laifi, M. F. Hasaneen, H. Bouazizi, Fatimah Hafiz Alsahli, T. A. Lafford, A. Bchetnia

Subjects: “…GaN…”
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Study of GaN Hall Effect Magnetic Sensors by Vlad Marsic, Soroush Faramehr, Isha Maini, David A. J. Moran, Petar Igic

Subjects: “…GaN transistor…”
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An X-Band Class-J GaN MMIC Power Amplifier with Well-Designed In-Band Output Power Flatness by Bangjie Zheng, Zhiqun Cheng, Zhiwei Zhang, Ruizhe Zhang, Tingwei Gong, Chao Le

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High external quantum efficiency in InGaN-based green micro-light emitting diodes at ultra-low current density by removing pre-wells by Aimin Wang, Kaixuan Chen, Junyong Kang

Subjects: “…InGaN…”
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Laser Writing of GaN/Ga2O3 Heterojunction Photodetector Arrays by Pengxiang Sun, Xun Yang, Kexue Li, Zhipeng Wei, Wei Fan, Shaoyi Wang, Weimin Zhou, Chongxin Shan

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Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth by Jiyao Du, Taofei Pu, Xiaobo Li, Liuan Li, Jinping Ao, Hongwei Gao

Subjects: “…GaN MOSFET…”
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Hybrid probe combining MicroLED and neural electrode for precise neural modulation and multi-site recording by Gota Shinohara, Tasuku Kayama, Ayumu Okui, Wataru Oda, Atsushi Nishikawa, Alexander Loesing, Nahoko Kuga, Takuya Sasaki, Hiroto Sekiguchi

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A photodetector for red and green with balanced negative and positive photocurrent for imaging is realized by Xuan Pu, Rongli Deng, Guanzhao Yang, Wenfeng Zhang, Haibin Lin, Junyong Li, Richard Nötzel

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A Gray-Box Equivalent Neural Network Circuit Small-Signal Modeling Applied to GaN Transistors by Anwar Jarndal

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A review of GaN RF devices and power amplifiers for 5G communication applications by Hao Lu, Meng Zhang, Ling Yang, Bin Hou, Rafael Perez Martinez, Minhan Mi, Jiale Du, Longge Deng, Mei Wu, Srabanti Chowdhury, Xiaohua Ma, Yue Hao

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On-chip integrated plasmon-induced high-performance self-powered Pt/GaN ultraviolet photodetector by Tong Xu, Shulin Sha, Kai Tang, Xuefeng Fan, Jinguo Liu, Caixia Kan, Gangyi Zhu, Feifei Qin, Daning Shi, Mingming Jiang

Subjects: “…GaN-on-Si…”
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In Situ X-Ray Study During Thermal Cycle Treatment Combined with Complementary Ex Situ Investigation of InGaN Quantum Wells by Ewa Grzanka, Sondes Bauer, Artur Lachowski, Szymon Grzanka, Robert Czernecki, Byeongchan So, Tilo Baumbach, Mike Leszczyński

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Aggressively scaled T-Gated GaN-on-silicon RF power HEMT featuring step graded SRL-AlGaN buffer for next generation broad band power amplifiers by A Akshaykranth, J Ajayan, Sandip Bhattacharya, D Nirmal, Santhosh Paramasivam, Gianluca Gatto, Amit Kumar

Subjects: “…GaN HEMT…”
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