A photodetector for red and green with balanced negative and positive photocurrent for imaging is realized by Xuan Pu, Rongli Deng, Guanzhao Yang, Wenfeng Zhang, Haibin Lin, Junyong Li, Richard Nötzel

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A Gray-Box Equivalent Neural Network Circuit Small-Signal Modeling Applied to GaN Transistors by Anwar Jarndal

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A review of GaN RF devices and power amplifiers for 5G communication applications by Hao Lu, Meng Zhang, Ling Yang, Bin Hou, Rafael Perez Martinez, Minhan Mi, Jiale Du, Longge Deng, Mei Wu, Srabanti Chowdhury, Xiaohua Ma, Yue Hao

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On-chip integrated plasmon-induced high-performance self-powered Pt/GaN ultraviolet photodetector by Tong Xu, Shulin Sha, Kai Tang, Xuefeng Fan, Jinguo Liu, Caixia Kan, Gangyi Zhu, Feifei Qin, Daning Shi, Mingming Jiang

Subjects: “…GaN-on-Si…”
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In Situ X-Ray Study During Thermal Cycle Treatment Combined with Complementary Ex Situ Investigation of InGaN Quantum Wells by Ewa Grzanka, Sondes Bauer, Artur Lachowski, Szymon Grzanka, Robert Czernecki, Byeongchan So, Tilo Baumbach, Mike Leszczyński

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Aggressively scaled T-Gated GaN-on-silicon RF power HEMT featuring step graded SRL-AlGaN buffer for next generation broad band power amplifiers by A Akshaykranth, J Ajayan, Sandip Bhattacharya, D Nirmal, Santhosh Paramasivam, Gianluca Gatto, Amit Kumar

Subjects: “…GaN HEMT…”
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Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm² by Jialun Li, Renqiang Zhu, Ka Ming Wong, Kei May Lau

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Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes by Jing Lang, Fujun Xu, Jiaming Wang, Lisheng Zhang, Xuzhou Fang, Ziyao Zhang, Xueqi Guo, Chen Ji, Chengzhi Ji, Fuyun Tan, Yong Wu, Xuelin Yang, Xiangning Kang, Zhixin Qin, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen

Subjects: “…AlGaN‐based UV‐LEDs…”
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A new discrete GaN-based dv/dt control circuit for megahertz frequency power converters by Bright K. Banzie, John K. Annan, Francis B. Effah

Subjects: “…GaN…”
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Chemically Engineered GaN Thin Films for Light‐Stimulated Artificial Synapses by Xiaoqin Yang, Jiawen Lu, Luyu Zhao, Xiaorui Han, Zhongwei Bai, Peiwen Quan, Liangshuai Xie, Liang Li, Haoxuan Sun, Mark Hermann Rummeli, Bingcheng Luo, Hong Gu

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2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates by Md Tahmidul Alam, Jiahao Chen, Kenneth Stephenson, Md Abdullah-Al Mamun, Abdullah Al Mamun Mazumder, Shubhra S. Pasayat, Asif Khan, Chirag Gupta

Subjects: “…AlGaN-channel HEMT…”
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Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S₂₂ and h₂₁: An Effective Machine Learning Approach by Zegen Zhu, Gianni Bosi, Antonio Raffo, Giovanni Crupi, Jialin Cai

Subjects: “…GaN HEMT…”
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Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates by Pieter Cardinael, Sachin Yadav, Bertrand Parvais, Jean-Pierre Raskin

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Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility by Julien Bassaler, Jash Mehta, Idriss Abid, Leszek Konczewicz, Sandrine Juillaguet, Sylvie Contreras, Stéphanie Rennesson, Sebastian Tamariz, Maud Nemoz, Fabrice Semond, Julien Pernot, Farid Medjdoub, Yvon Cordier, Philippe Ferrandis

Subjects: “…AlGaN channel high electron mobility transistor…”
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A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs by Yatexu Patel, Pouya Valizadeh

Subjects: “…InAlN/GaN…”
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Performance Improvement of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Tapered SiO₂-Buried Structure by Rongbin Xu, Yachao Wang, Mingchao Fang, Yang Mei, Leiying Ying, Daquan Yu, Baoping Zhang

Subjects: “…GaN-based laser…”
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Epitaxial growth of transition metal nitrides by reactive sputtering by Florian Hörich, Christopher Lüttich, Jona Grümbel, Jürgen Bläsing, Martin Feneberg, Armin Dadgar, Rüdiger Goldhahn, André Strittmatter

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Stability of GaN HEMT Device Under Static and Dynamic Gate Stress by Linfei Gao, Ze Zhong, Qiyan Zhang, Xiaohua Li, Xinbo Xiong, Shaojun Chen, Longkou Chen, Huaibao Yan, Anle Zhang, Jiajun Han, Wenrong Zhuang, Feng Qiu, Hsien-Chin Chiu, Shuangwu Huang, Xinke Liu

Subjects: “…p-GaN HEMT…”
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Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs by An-Chen Liu, Hsin-Chu Chen, Po-Tsung Tu, Yan-Lin Chen, Yan-Chieh Chen, Po-Chun Yeh, Chih-I Wu, Shu-Tong Chang, Tsung-Sheng Kao, Hao-Chung Kuo

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Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities by Artem Bercha, Mikołaj Chlipała, Mateusz Hajdel, Grzegorz Muzioł, Marcin Siekacz, Henryk Turski, Witold Trzeciakowski

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