Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility by Julien Bassaler, Jash Mehta, Idriss Abid, Leszek Konczewicz, Sandrine Juillaguet, Sylvie Contreras, Stéphanie Rennesson, Sebastian Tamariz, Maud Nemoz, Fabrice Semond, Julien Pernot, Farid Medjdoub, Yvon Cordier, Philippe Ferrandis

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Enhanced Conductivity of Multilayer Copper–Carbon Nanofilms via Plasma Immersion Deposition by Haotian Weng, Xiwu Zhang, Xuan Liu, Yunhui Tang, Hewei Yuan, Yang Xu, Kun Li, Xiaolu Huang

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3 kV monolithic bidirectional GaN HEMT on sapphire by Md Tahmidul Alam, Swarnav Mukhopadhyay, Md Mobinul Haque, Shubhra S. Pasayat, Chirag Gupta

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A Theoretical Study on the Influence of the Functional Group Electronic Effect on the Electron Mobility of Cross-Linked Polyethylene by Yang Du, Hui Zhang, Xia Du, Yan Shang, Xuan Wang, Qingguo Chen, Zesheng Li

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The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications by Qian Yu, Sheng Wu, Meng Zhang, Ling Yang, Xu Zou, Hao Lu, Chunzhou Shi, Wenze Gao, Mei Wu, Bin Hou, Gang Qiu, Xiaoning He, Xiaohua Ma, Yue Hao

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