Oxygen Doping in Ferroelectric Wurtzite‐type Al0.73Sc0.27N: Improved Leakage and Polarity Control by Md Redwanul Islam, Niklas Wolff, Georg Schönweger, Tom‐Niklas Kreutzer, Margaret Brown, Maike Gremmel, Eric S. Ollanescu‐Orendi, Patrik Straňák, Lutz Kirste, Geoff L. Brennecka, Simon Fichtner, Lorenz Kienle

Subjects: “…AlScN…”
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2DEG properties of AlScN/GaN and AlYN/GaN HEMTs determined by terahertz optical Hall effect by V. Stanishev, V. Stanishev, I. Streicher, I. Streicher, A. Papamichail, V. Rindert, P. P. Paskov, S. Leone, V. Darakchieva, V. Darakchieva

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Interfacial Polarization Switching in Al0.92Sc0.08N/GaN Heterostructures Grown by Sputter Epitaxy by Niklas Wolff, Georg Schönweger, Md. Redwanul Islam, Ziming Ding, Christian Kübel, Simon Fichtner, Lorenz Kienle

Subjects: “…AlScN…”
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Aluminum Scandium Nitride as a Functional Material at 1000 °C by Venkateswarlu Gaddam, Shaurya S. Dabas, Jinghan Gao, David J. Spry, Garrett Baucom, Nicholas G. Rudawski, Tete Yin, Ethan Angerhofer, Philip G. Neudeck, Honggyu Kim, Philip X.‐L. Feng, Mark Sheplak, Roozbeh Tabrizian

Subjects: “…AlScN…”
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Performance Analysis of Scandium-Doped Aluminum Nitride-Based PMUTs Under High-Temperature Conditions by Haochen Lyu, Ahmad Safari

Subjects: “…scandium-doped aluminum nitride (AlScN)…”
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