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    Gate Engineering Effect in Ferroelectric Field‐Effect Transistors with Al‐Doped HfO2 Thin Film and Amorphous Indium‐Gallium‐Zinc‐Oxide Channel

    Gate Engineering Effect in Ferroelectric Field‐Effect Transistors with Al‐Doped HfO2 Thin Film and Amorphous Indium‐Gallium‐Zinc‐Oxide Channel by Jae Hoon Lee, Yonghee Lee, Joon‐Kyu Han, Kyung Do Kim, Seung Ryong Byun, Hyeon Woo Park, Cheol Seong Hwang

    Published 2025-03-01
    Subjects: “…Al‐doped HfO2…”
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