Density Functional Modelling of Elastic Properties of Elemental Semiconductors

The expressions for bulk modulus, its first and second pressure derivatives for elemental semiconductors are derived using the ab initio pseudopotential approach to the total crystal energy within the framework of local Density Functional formalism. The expression for the second pressure derivative...

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Main Authors: M. Verma, B.K. Sharma, G. Misra, P. Tripathi
Format: Article
Language:English
Published: Sumy State University 2011-01-01
Series:Журнал нано- та електронної фізики
Subjects:
Online Access:http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%203/articles/jnep_2011_V3_N1(Part3)_469-473.pdf
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author M. Verma
B.K. Sharma
G. Misra
P. Tripathi
author_facet M. Verma
B.K. Sharma
G. Misra
P. Tripathi
author_sort M. Verma
collection DOAJ
description The expressions for bulk modulus, its first and second pressure derivatives for elemental semiconductors are derived using the ab initio pseudopotential approach to the total crystal energy within the framework of local Density Functional formalism. The expression for the second pressure derivative of the bulk modulus for four-fold crystal structures are derived for the first time within the pseudopotential framework. The computed results for the semiconductors under study are very close to the available experimental data and will be useful in the study of equation of states.
format Article
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institution OA Journals
issn 2077-6772
language English
publishDate 2011-01-01
publisher Sumy State University
record_format Article
series Журнал нано- та електронної фізики
spelling doaj-art-fffd246a7bb44c168dfce2b865657bf02025-08-20T02:22:50ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722011-01-0131469473Density Functional Modelling of Elastic Properties of Elemental SemiconductorsM. VermaB.K. SharmaG. MisraP. TripathiThe expressions for bulk modulus, its first and second pressure derivatives for elemental semiconductors are derived using the ab initio pseudopotential approach to the total crystal energy within the framework of local Density Functional formalism. The expression for the second pressure derivative of the bulk modulus for four-fold crystal structures are derived for the first time within the pseudopotential framework. The computed results for the semiconductors under study are very close to the available experimental data and will be useful in the study of equation of states.http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%203/articles/jnep_2011_V3_N1(Part3)_469-473.pdfAb Initio CalculationsPseudopotentialElastic PropertiesElemental Semiconductors
spellingShingle M. Verma
B.K. Sharma
G. Misra
P. Tripathi
Density Functional Modelling of Elastic Properties of Elemental Semiconductors
Журнал нано- та електронної фізики
Ab Initio Calculations
Pseudopotential
Elastic Properties
Elemental Semiconductors
title Density Functional Modelling of Elastic Properties of Elemental Semiconductors
title_full Density Functional Modelling of Elastic Properties of Elemental Semiconductors
title_fullStr Density Functional Modelling of Elastic Properties of Elemental Semiconductors
title_full_unstemmed Density Functional Modelling of Elastic Properties of Elemental Semiconductors
title_short Density Functional Modelling of Elastic Properties of Elemental Semiconductors
title_sort density functional modelling of elastic properties of elemental semiconductors
topic Ab Initio Calculations
Pseudopotential
Elastic Properties
Elemental Semiconductors
url http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%203/articles/jnep_2011_V3_N1(Part3)_469-473.pdf
work_keys_str_mv AT mverma densityfunctionalmodellingofelasticpropertiesofelementalsemiconductors
AT bksharma densityfunctionalmodellingofelasticpropertiesofelementalsemiconductors
AT gmisra densityfunctionalmodellingofelasticpropertiesofelementalsemiconductors
AT ptripathi densityfunctionalmodellingofelasticpropertiesofelementalsemiconductors