Effect of Γ – X band crossover on resonant tunneling properties of electrons in double-barrier triangular heterostructures
The transfer matrix method is employed to study the electron tunneling in GaAs/GaAlAs triangular double-barrier heterostructure. The barrier width enhances the tunneling lifetime of electrons. Without Γ – X crossover in the conduction band, the resonance energy is almost constant whereas the tunneli...
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| Format: | Article |
| Language: | English |
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Elsevier
2025-01-01
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| Series: | Results in Surfaces and Interfaces |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666845924002307 |
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| author | L. Bruno Chandrasekar Lalitha Gnanasekaran Madhappan Santhamoorthy E. Priyadharshini M. Karunakaran Manikandan Ayyar P. Shunmuga Sundaram |
| author_facet | L. Bruno Chandrasekar Lalitha Gnanasekaran Madhappan Santhamoorthy E. Priyadharshini M. Karunakaran Manikandan Ayyar P. Shunmuga Sundaram |
| author_sort | L. Bruno Chandrasekar |
| collection | DOAJ |
| description | The transfer matrix method is employed to study the electron tunneling in GaAs/GaAlAs triangular double-barrier heterostructure. The barrier width enhances the tunneling lifetime of electrons. Without Γ – X crossover in the conduction band, the resonance energy is almost constant whereas the tunneling lifetime of electrons increases as the pressure increases. Above the critical pressure, Γ – X crossover takes place. With Γ – X crossover, the energy of resonance decreases. The transparency peak becomes wider at high pressure and the electrons move with high velocity in the heterostructure at resonance when the heterostructure is subjected to high pressure. |
| format | Article |
| id | doaj-art-ffd92fbe77e243bdbe764f736ef7dd58 |
| institution | DOAJ |
| issn | 2666-8459 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Surfaces and Interfaces |
| spelling | doaj-art-ffd92fbe77e243bdbe764f736ef7dd582025-08-20T02:57:33ZengElsevierResults in Surfaces and Interfaces2666-84592025-01-011810041010.1016/j.rsurfi.2024.100410Effect of Γ – X band crossover on resonant tunneling properties of electrons in double-barrier triangular heterostructuresL. Bruno Chandrasekar0Lalitha Gnanasekaran1Madhappan Santhamoorthy2E. Priyadharshini3M. Karunakaran4Manikandan Ayyar5P. Shunmuga Sundaram6Department of Physics, Karpagam Academy of Higher Education, Coimbatore, India; Corresponding author.Instituto de Alta Investigación, Universidad de Tarapacá, Arica, 1000000, ChileSchool of Chemical Engineering, Yeungnam University, Gyeongsan, 38541, Republic of KoreaDepartment of Physics (S&H), Velammal Institute of Technology, Panchetti, Chennai, 601 204, IndiaDepartment of Physics, Alagappa Government Arts College, Karaikudi, IndiaDepartment of Chemistry, Centre for Material Chemistry, Karpagam Academy of Higher Education, Coimbatore, 641 021, IndiaDepartment of Biochemistry, Saveetha Medical College and Hospital, Chennai, India; Saveetha Institute of Medical and Technical Sciences, Chennai, IndiaThe transfer matrix method is employed to study the electron tunneling in GaAs/GaAlAs triangular double-barrier heterostructure. The barrier width enhances the tunneling lifetime of electrons. Without Γ – X crossover in the conduction band, the resonance energy is almost constant whereas the tunneling lifetime of electrons increases as the pressure increases. Above the critical pressure, Γ – X crossover takes place. With Γ – X crossover, the energy of resonance decreases. The transparency peak becomes wider at high pressure and the electrons move with high velocity in the heterostructure at resonance when the heterostructure is subjected to high pressure.http://www.sciencedirect.com/science/article/pii/S2666845924002307Transfer matrixTunnelingΓ – X crossoverResonance |
| spellingShingle | L. Bruno Chandrasekar Lalitha Gnanasekaran Madhappan Santhamoorthy E. Priyadharshini M. Karunakaran Manikandan Ayyar P. Shunmuga Sundaram Effect of Γ – X band crossover on resonant tunneling properties of electrons in double-barrier triangular heterostructures Results in Surfaces and Interfaces Transfer matrix Tunneling Γ – X crossover Resonance |
| title | Effect of Γ – X band crossover on resonant tunneling properties of electrons in double-barrier triangular heterostructures |
| title_full | Effect of Γ – X band crossover on resonant tunneling properties of electrons in double-barrier triangular heterostructures |
| title_fullStr | Effect of Γ – X band crossover on resonant tunneling properties of electrons in double-barrier triangular heterostructures |
| title_full_unstemmed | Effect of Γ – X band crossover on resonant tunneling properties of electrons in double-barrier triangular heterostructures |
| title_short | Effect of Γ – X band crossover on resonant tunneling properties of electrons in double-barrier triangular heterostructures |
| title_sort | effect of γ x band crossover on resonant tunneling properties of electrons in double barrier triangular heterostructures |
| topic | Transfer matrix Tunneling Γ – X crossover Resonance |
| url | http://www.sciencedirect.com/science/article/pii/S2666845924002307 |
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