Simulation Study on Switching Process and Reverse Recovery Performance of Low Miller Capacitance Super Junction MOSFET
For super junction field effect transistor (SJ-MOSFET), two device structures with different p-pillar morphology of multiple epitaxial ion implantation and deep groove etching were established. The static characteristics of SJ-MOS with different processes and gate structures were compared and studie...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | zho |
| Published: |
Editorial Department of Electric Drive for Locomotives
2021-09-01
|
| Series: | 机车电传动 |
| Subjects: | |
| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2021.05.006 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849729285413142528 |
|---|---|
| author | Maosen TANG Dong LIU Jun SHEN Xinlai GE Rongbin ZHOU Junhan YE |
| author_facet | Maosen TANG Dong LIU Jun SHEN Xinlai GE Rongbin ZHOU Junhan YE |
| author_sort | Maosen TANG |
| collection | DOAJ |
| description | For super junction field effect transistor (SJ-MOSFET), two device structures with different p-pillar morphology of multiple epitaxial ion implantation and deep groove etching were established. The static characteristics of SJ-MOS with different processes and gate structures were compared and studied, and compared with the measured data to verify the correctness of the model.From the perspective of uneven expansion of space charge region, the micro mechanism of "capacitance turning" phenomenon in <italic>C</italic>-<italic>V</italic> characteristic test of devices with different process routes was analyzed. Then, the variation of gate voltage, drain current and drain source voltage with time in the switching process of SJ-MOS under inductive load was studied. Finally, a parasitic diode reverse recovery test platform was built to explore the effects of different processes on parameters such as reverse recovery charge and peak current. The research content of this paper could guide the device design to a certain extent and improve the matching degree of power semiconductor devices in locomotive application scenarios. |
| format | Article |
| id | doaj-art-ff44b29494d9417580dbc9f1b9859f3f |
| institution | DOAJ |
| issn | 1000-128X |
| language | zho |
| publishDate | 2021-09-01 |
| publisher | Editorial Department of Electric Drive for Locomotives |
| record_format | Article |
| series | 机车电传动 |
| spelling | doaj-art-ff44b29494d9417580dbc9f1b9859f3f2025-08-20T03:09:15ZzhoEditorial Department of Electric Drive for Locomotives机车电传动1000-128X2021-09-01384620898586Simulation Study on Switching Process and Reverse Recovery Performance of Low Miller Capacitance Super Junction MOSFETMaosen TANGDong LIUJun SHENXinlai GERongbin ZHOUJunhan YEFor super junction field effect transistor (SJ-MOSFET), two device structures with different p-pillar morphology of multiple epitaxial ion implantation and deep groove etching were established. The static characteristics of SJ-MOS with different processes and gate structures were compared and studied, and compared with the measured data to verify the correctness of the model.From the perspective of uneven expansion of space charge region, the micro mechanism of "capacitance turning" phenomenon in <italic>C</italic>-<italic>V</italic> characteristic test of devices with different process routes was analyzed. Then, the variation of gate voltage, drain current and drain source voltage with time in the switching process of SJ-MOS under inductive load was studied. Finally, a parasitic diode reverse recovery test platform was built to explore the effects of different processes on parameters such as reverse recovery charge and peak current. The research content of this paper could guide the device design to a certain extent and improve the matching degree of power semiconductor devices in locomotive application scenarios.http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2021.05.006super junction MOSFET<italic>C</italic>-<italic>V</italic> characteristicbody diodedouble pulse testreverse recovery test |
| spellingShingle | Maosen TANG Dong LIU Jun SHEN Xinlai GE Rongbin ZHOU Junhan YE Simulation Study on Switching Process and Reverse Recovery Performance of Low Miller Capacitance Super Junction MOSFET 机车电传动 super junction MOSFET <italic>C</italic>-<italic>V</italic> characteristic body diode double pulse test reverse recovery test |
| title | Simulation Study on Switching Process and Reverse Recovery Performance of Low Miller Capacitance Super Junction MOSFET |
| title_full | Simulation Study on Switching Process and Reverse Recovery Performance of Low Miller Capacitance Super Junction MOSFET |
| title_fullStr | Simulation Study on Switching Process and Reverse Recovery Performance of Low Miller Capacitance Super Junction MOSFET |
| title_full_unstemmed | Simulation Study on Switching Process and Reverse Recovery Performance of Low Miller Capacitance Super Junction MOSFET |
| title_short | Simulation Study on Switching Process and Reverse Recovery Performance of Low Miller Capacitance Super Junction MOSFET |
| title_sort | simulation study on switching process and reverse recovery performance of low miller capacitance super junction mosfet |
| topic | super junction MOSFET <italic>C</italic>-<italic>V</italic> characteristic body diode double pulse test reverse recovery test |
| url | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2021.05.006 |
| work_keys_str_mv | AT maosentang simulationstudyonswitchingprocessandreverserecoveryperformanceoflowmillercapacitancesuperjunctionmosfet AT dongliu simulationstudyonswitchingprocessandreverserecoveryperformanceoflowmillercapacitancesuperjunctionmosfet AT junshen simulationstudyonswitchingprocessandreverserecoveryperformanceoflowmillercapacitancesuperjunctionmosfet AT xinlaige simulationstudyonswitchingprocessandreverserecoveryperformanceoflowmillercapacitancesuperjunctionmosfet AT rongbinzhou simulationstudyonswitchingprocessandreverserecoveryperformanceoflowmillercapacitancesuperjunctionmosfet AT junhanye simulationstudyonswitchingprocessandreverserecoveryperformanceoflowmillercapacitancesuperjunctionmosfet |